Phot-detectors with high gain have low response time. Select one: O True O False

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 J.s
Si
Ge
Ga As
-31
9.11 x 10
Kg
Eg (eV)
n; (cm
Hn (cm²/V – s)
Hp (cm²/V – s)
Ne (cm-3)
Ny (cm-3)
m/m.
m;/m.
Er (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
19
1.602 x 10
8.85 x 10
1.05 x 10-34 J – s
C
1500
3900
8500
12
€o
F/m
450
1900
400
1.04 x 1019
6 x 1018
4.45 x 1017
7.72 x 1018
2.78 x 1019
8.6 x 10-5 eV/K
26 mV (T
K
9.84 x 1018
KT/q
= 300 K)
0.082
0.98
0.067
26 meV (T
3 x 10 m/s
KT
300 K)
0.28
0.49
0.45
C
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
EgAlGa1- As (r) = 1.424 + 1.247x (eV)
Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV)
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
Transcribed Image Text:: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge Ga As -31 9.11 x 10 Kg Eg (eV) n; (cm Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) Ny (cm-3) m/m. m;/m. Er (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 19 1.602 x 10 8.85 x 10 1.05 x 10-34 J – s C 1500 3900 8500 12 €o F/m 450 1900 400 1.04 x 1019 6 x 1018 4.45 x 1017 7.72 x 1018 2.78 x 1019 8.6 x 10-5 eV/K 26 mV (T K 9.84 x 1018 KT/q = 300 K) 0.082 0.98 0.067 26 meV (T 3 x 10 m/s KT 300 K) 0.28 0.49 0.45 C 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations EgAlGa1- As (r) = 1.424 + 1.247x (eV) Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV) 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm2
Phot-detectors with high gain have low response time.
Select one:
O True
O False
Transcribed Image Text:Phot-detectors with high gain have low response time. Select one: O True O False
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