PART I: Theory Question 1: Consider a silicon diode with reverse saturation current of Is = 2 pA. a. Assuming that this diode is operating at room temperature (25°C), calculate the diode current Io for each diode voltage Vo given in the following table : Vo (V) Io (ma) -20 -15 -10 -5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 b. Using the results of the above table, plot the terminal characteristics of the above diode. c. Approximate the curve you have plotted in part (b) by two straight lines and calculate the parameters of the "piecewise linear model" of this diode.

Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
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PART I: Theory
Question 1:
Consider a silicon diode with reverse saturation current of Is = 2 pA.
a. Assuming that this diode is operating at room temperature (25°C), calculate the
diode current Ip for each diode voltage VD given in the following table :
Vo (V)
0.1
-20
-15
-10
-5
0.2
0.3
0.4
0.5
0.6
0.7
0.8
l (ma)
b. Using the results of the above table, plot the terminal characteristics of the above
diode.
c. Approximate the curve you have plotted in part (b) by two straight lines and
calculate the parameters of the "piecewise linear model" of this diode.
Transcribed Image Text:PART I: Theory Question 1: Consider a silicon diode with reverse saturation current of Is = 2 pA. a. Assuming that this diode is operating at room temperature (25°C), calculate the diode current Ip for each diode voltage VD given in the following table : Vo (V) 0.1 -20 -15 -10 -5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 l (ma) b. Using the results of the above table, plot the terminal characteristics of the above diode. c. Approximate the curve you have plotted in part (b) by two straight lines and calculate the parameters of the "piecewise linear model" of this diode.
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