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ΟΙ A silicon sample doped with 1017 donor atoms/cm³. Find at 300K: 1. The equilibrium hole concentration 2. Fermi level location relative to the intrinsic Fermi level 3. The current passing when 10V is applied through the sample (the dimensions are 0.1 cm long and 100 μm² in cross sectional area). Take: n=1.5×101/cm³, H. = 1350 cm²/V. s, Hp = 480 cm²/V. s, kT = 26 mV =1

ΟΙ A silicon sample doped with 1017 donor atoms/cm³. Find at 300K: 1. The equilibrium hole concentration 2. Fermi level location relative to the intrinsic Fermi level 3. The current passing when 10V is applied through the sample (the dimensions are 0.1 cm long and 100 μm² in cross sectional area). Take: n=1.5×101/cm³, H. = 1350 cm²/V. s, Hp = 480 cm²/V. s, kT = 26 mV =1

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q1 A silicon sample doped with 10'* donor atoms/cm^2. Find at 300K: 1. The equilibrium hole concentration 2. Fermi level location relative to the intrinsic Fermi level 3. The current passing when 10V is applied through the sample (the dimensions are 0.1 cm long and 100 um? in cross sectional area. Take: ni = 1.5×10^10/cm^2, ųa = 1350 cm^2/V. s, ųp = 480 cm^2//V. s, kT = 26 mV
ΟΙ A silicon sample doped with 1017 donor atoms/cm³. Find at 300K: 1. The equilibrium hole concentration 2. Fermi level location relative to the intrinsic Fermi level 3. The current passing when 10V is applied through the sample (the dimensions are 0.1 cm long and 100 μm² in cross sectional area). Take: n=1.5×101/cm³, H. = 1350 cm²/V. s, Hp = 480 cm²/V. s, kT = 26 mV =1
Transcribed Image Text:ΟΙ A silicon sample doped with 1017 donor atoms/cm³. Find at 300K: 1. The equilibrium hole concentration 2. Fermi level location relative to the intrinsic Fermi level 3. The current passing when 10V is applied through the sample (the dimensions are 0.1 cm long and 100 μm² in cross sectional area). Take: n=1.5×101/cm³, H. = 1350 cm²/V. s, Hp = 480 cm²/V. s, kT = 26 mV =1
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