oericדורושורוהע profile in the base is linear (equation 11.44 text) QUESTION 3 What applied VCB (volts) will cause punch-through? The silicon emitter is doped p-type as 19 5.5*10 /cc, the base is doped n-type as 5.2*10 5/cc, and the collector is doped p-type as 4.2*1014/cc, The metallurgical width of the base is 0.9 microns, and VEB is 0.66 volts and the transistor is at 300K. Three significant figures and fixed point notation. Assume 2x Esi 1.304 x 107 |3D e Vx cm QUESTION 4

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Q: B = 60 10 uF 10 uF Vo 2.4 kQ 1.2 kQ 10 V 4 V wwH-

A:

Q: For the circuit shown in Figure B23, a = 0.94, calculate the following: i. Collector current (Ic)…

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A: By drain current equation we will find out drain current.

Q: What is Quiescent? What does it mean a transistor in saturation?

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Q: 4. Determine the lc and Ver for the transistor circuit in Figure Vcc 10 V VBB 5 V R 1.0 kn

A: Given,

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Q: In D-MOSFET, IDSS is the maximum Drain current True O False

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A: [1]

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Q: threshold voltage is 3V, if the

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Q: For the circuit shown in Figure B23, a = 0.94, calculate the following: i. Collector current (Ic)…

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A:

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Q: transistor uses

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Q: ww 2:2 ww Vec www. ☺ W Re UNP Voll

A:

Q: Q/B For the circuit below, RE=2K ohm, RC=3K ohm, VEE=4 Volt, Vcc=20Volt. Assume the transistor to be…

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Q: L YIN RB Vec 12V Re ti 2k - OUT B = 100

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Q: Assume a knee voltage of 0.7V and B-120 for all transistors. Determine the Ve. 5VDC CO 1 0M2 3002 Vc

A: Redraw the circuit diagram,

Q: The region in the drain characteristics of FET where the drain current (Ip) is linear to the drain…

A:

Code Conversion

The method or technique used to convert code from one format to another is termed code conversion. Code conversions are most commonly used in computers, digital electronics, microprocessors, etc.