o 20 V 1.1 ka 330 kQ 91 ka B 160 VD Dss = 6 mA Vp = -6 V VG %3D 18 k2 1.2 ka
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Determine Drain Current (IDQ)
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- not use ai pleaseFor the semiconductor diode the "on" state will support a current in the direction of the in the symbol. Your answer The region of uncovered positive and negative ions is called the due to the diminution of free carriers in the region. (Two Words) Your answer What is the net flow of charge in the absence of an applied bias across a semiconductor diode? Your answerConsider a n-type silicon sample. If a power supply is connected between two ends of the silicon sample with 5 volts of voltage, 5 milliampers of current flows through the sample. If Na=3x1014 cm-3, N3=0, Dn=10 cm2/sec, Dp=20 cm2/sec, kt/q=D0.025 volts, obtain mobilkity if the sample area is two times its length in magnitude. (q=1.6x10-19 C, T=300 °K, kT=0.025 Ev, n=1010 cm-3) O a. 0.75 O b. 12.2 O c. 10.42 O d. 0.0675 O e. 20.85 O f. 0.45 O g. 8.5 O h. 885
- _mA. No If a Si diode at room temperature (25°) has a leakage current Is = 46 nA, k = 5,800, and V₁ = 0.65 V, The diode current is need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places. Add your answer Short answer. What is the greatest threat to a diode? Use the editor to format your answer Short answer. What type of bias makes a diode act as a closed switch? Use the editor to format your answerDiodes Si diodes will be considered. Which of the following is wrong I. D3 diode blocking. II. Diode D3 is on. III. Diode D4 is conducting. IV. Diode D4 is in blocking.In your own words(not googled) please answer and help me understand the following a. What is a LED? Explain the working of a LED and give at least two applications. b. Why do LEDs need series current-limiting resistors? c. How does LED differ from an ordinary diode? d. What is a photodiode? Explain how it works and give at least two applications. e. What is a/an: i. Tunnel diode ii. Optoisolator iii. Varactor diode iv. Shockley diode
- FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…The characteristic of the UJT exhibits the following values: n = 0.575, RB1 = 10 k-ohms, Vv = 1.3 V, Iv =20mA, Ip=15UA. 125V B2 B, Determine the following: a. Determine the R82 (in kilo-ohms) of the UJT b. Determine the maximum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT c. Determine the minimum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJTliting Q9. For the circuit shown in Figure C9, Calculate the following i) Current through the Silicon diode (Isi). ii) Current through the Resistor R2 (1). iii) Current through the diode D4 (IGe4). iv) Voltage at points V3 and V4. Is D1. D2 Si Si oV4 RI 1.3K2 R3 2.7K R2 3K2 IGe4| 15V D5 Si 03 D4 Ge Ge V2 1V Figure C9