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Neamen - Problem 7.8 (Note: parts (a) and (b) appeared on a previous homework Consider a GaAs junction in thermal equilibrium at T = 300K. At zero bias, only 20% of the depletion region is to be on the p side of the junction. The built-in potentia barrier is 1.2V. At zero bias, determine: (a) Na (b) Na (c) n

Neamen - Problem 7.8 (Note: parts (a) and (b) appeared on a previous homework Consider a GaAs junction in thermal equilibrium at T = 300K. At zero bias, only 20% of the depletion region is to be on the p side of the junction. The built-in potentia barrier is 1.2V. At zero bias, determine: (a) Na (b) Na (c) n

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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8.) Neamen - Problem 7.8 (Note: parts (a) and (b) appeared on a previous homework) Consider a GaAs junction in thermal equilibrium at T = 300K. At zero bias, only 20% of the depletion region is to be on the p side of the junction. The built-in potential. barrier is 1.2V. At zero bias, determine: (a) Na (b) Na (c) n (d) Xp (e) Ēma
Transcribed Image Text:8.) Neamen - Problem 7.8 (Note: parts (a) and (b) appeared on a previous homework) Consider a GaAs junction in thermal equilibrium at T = 300K. At zero bias, only 20% of the depletion region is to be on the p side of the junction. The built-in potential. barrier is 1.2V. At zero bias, determine: (a) Na (b) Na (c) n (d) Xp (e) Ēma
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