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(Neamen: Problem 7.17) - Consider a silicon pn junction with doping concentrations Na = 5 x 10¹7 cm-3 and Na = 1 × 10¹7 cm-³. The junction is at T = 300K, has a cross-sectional area of 1 × 10-4 cm², and an applied reverse bias of 5V. Calculate: (a) Vbi (b) £ng p W (c) |Ē max, the maximum electric field in the junction. (d) The junction capacitance.

(Neamen: Problem 7.17) - Consider a silicon pn junction with doping concentrations Na = 5 x 10¹7 cm-3 and Na = 1 × 10¹7 cm-³. The junction is at T = 300K, has a cross-sectional area of 1 × 10-4 cm², and an applied reverse bias of 5V. Calculate: (a) Vbi (b) £ng p W (c) |Ē max, the maximum electric field in the junction. (d) The junction capacitance.

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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= 10.) (Neamen: Problem 7.17) - Consider a silicon pn junction with doping concentrations = Na = 5 x 10¹7 cm 1-3 and Na 1 × 10¹7 cm-³. The junction is at T 300K, has a area of 1 × 10−4 cm², and an applied reverse bias of 5V. Calculate: cross-sectional (a) Vbi (b) xn, xp, W (c) Emax, the maximum electric field in the junction. (d) The junction capacitance.
Transcribed Image Text:= 10.) (Neamen: Problem 7.17) - Consider a silicon pn junction with doping concentrations = Na = 5 x 10¹7 cm 1-3 and Na 1 × 10¹7 cm-³. The junction is at T 300K, has a area of 1 × 10−4 cm², and an applied reverse bias of 5V. Calculate: cross-sectional (a) Vbi (b) xn, xp, W (c) Emax, the maximum electric field in the junction. (d) The junction capacitance.
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