Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An electric field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority carriers [ cm/s ] at 350 K. is. 5.18 12.3 O 5.81 7.24 O

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Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at
one point. An electric field of 50 V/cm is applied across the sample, and the field moves
these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority
carriers [ cm²/s ] at 350 K is. .
5.18
12.3 O
5.81
7.24 O
Transcribed Image Text:Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An electric field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1.2 cm in 100 µs. The diffusivity of the minority carriers [ cm²/s ] at 350 K is. . 5.18 12.3 O 5.81 7.24 O
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