Microelectronic Start 7.30 For the NMOS amplifier in Fig. P7.30, replace the transistor with its Tequivalent circuit, assuming 2 = 0. Derive expressions for the voltage gains vv, and v,lv,- +VDD Rp Us Rs -Vss Figure P7.30
Microelectronic Start 7.30 For the NMOS amplifier in Fig. P7.30, replace the transistor with its Tequivalent circuit, assuming 2 = 0. Derive expressions for the voltage gains vv, and v,lv,- +VDD Rp Us Rs -Vss Figure P7.30
Introductory Circuit Analysis (13th Edition)
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Hi, I need the answer for question 7.30
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Microelectronic_Circuits_...
model parameters (g„ and r,) for botn an NMOS and a PVIOS
m
7.30 For the NMOS amplifier in Fig. P7.30, replace the
transistor with its Tequivalent circuit, assuming A =0. Derive
expressions for the voltage gains v,lv, and v,/v,.
transistor having W/L :
10 µm/0.5 µm and operating at I,
100 µA. Also, find the overdrive voltage at which each device
must be operating.
+VDD
*7.33 Figure P7.33 shows a discrete-circuit amplifier. The
input signal vsig is coupled to the gate through a very
large capacitor (shown as infinite). The transistor source is
connected to ground at signal frequencies via a very large
capacitor (shown as infinite). The output voltage signal that
develops at the drain is coupled to a load resistance via a very
large capacitor (shown as infinite). All capacitors behave as
short circuits for signals and as open circuits for dc.
Rp
O Ud
O Us
Vi
Rs
= 1 V, and k, = 4 mA/V°, verify
(a) If the transistor has V,
that the bias circuit establishes Ves = 1.5 V, I, = 0.5 mA,
and V, =+7.0 V. That is, assume these values, and verify
that they are consistent with the values of the circuit
-Vss
components and the device parameters.
Figure P7.30
(b) Find g„ and r, if V, = 100 V.
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