μ= Ev+E+kln(m/m) The chemical potential is close to the center of the band gap, slightly shifted toward the band with the lighter effective mass. At room temperature, we have an intrinsic electron density of: nsi = 1.45 × 1016 m-3 nGaAs =1.8 × 1012 m-3 for silicon for GaAs Exercise 3: Obtain the carrier densities for electrons and holes and dependence of the chemical potential on temperature.
μ= Ev+E+kln(m/m) The chemical potential is close to the center of the band gap, slightly shifted toward the band with the lighter effective mass. At room temperature, we have an intrinsic electron density of: nsi = 1.45 × 1016 m-3 nGaAs =1.8 × 1012 m-3 for silicon for GaAs Exercise 3: Obtain the carrier densities for electrons and holes and dependence of the chemical potential on temperature.
Linear Algebra: A Modern Introduction
4th Edition
ISBN:9781285463247
Author:David Poole
Publisher:David Poole
Chapter6: Vector Spaces
Section6.7: Applications
Problem 18EQ
Question

Transcribed Image Text:μ= Ev+E+kln(m/m)
The chemical potential is close to the center of the band gap,
slightly shifted toward the band with the lighter effective mass.
At room temperature, we have an intrinsic electron density of:
nsi = 1.45 × 1016 m-3
nGaAs =1.8 × 1012 m-3
for silicon
for GaAs
Exercise 3: Obtain the carrier densities for electrons and holes
and dependence of the chemical potential on temperature.
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