It is required to design the circuit of Fig. 5.52(c) to establish a de drain current I, 0.5 mA. The MOSFET specified to have V,= 1 V and k,W/L = 1 mA/V. For simplicity, neglect the channel-length modulatio effect (i.e., assume à 0). Use a power-supply VDp= 15 V. Calculate the percentage change in the value c I, obtained when the MOSFET is replaced with another unit having the same W/L but V,= 1.5 V. %3D %3D VDD bD: 5L Rp Ro: Ver Ip VG VGS RG2 Rs

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It is required to design the circuit of Fig. 5.52(c) to establish a de drain current I, = 0.5 mA. The MOSFET is
specified to have V, = 1 V and k,W/L = 1 mA/V. For simplicity, neglect the channel-length modulation
effect (i.e., assume 2= 0). Use a power-supply Vpp = 15 V. Calculate the percentage change in the value of
I, obtained when the MOSFET is replaced with another unit having the same k,W/L but V,= 1.5 V.
VDD
Rp
RGI
Ro=
VG
VGS
R$
RG2
(c)
Transcribed Image Text:It is required to design the circuit of Fig. 5.52(c) to establish a de drain current I, = 0.5 mA. The MOSFET is specified to have V, = 1 V and k,W/L = 1 mA/V. For simplicity, neglect the channel-length modulation effect (i.e., assume 2= 0). Use a power-supply Vpp = 15 V. Calculate the percentage change in the value of I, obtained when the MOSFET is replaced with another unit having the same k,W/L but V,= 1.5 V. VDD Rp RGI Ro= VG VGS R$ RG2 (c)
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