IQ1] By using an ideal class A amplifier circuit transistor characteristic sheet, and consideringthe VCEmin 5V and VCEmax 20 V while the current swing of 4 mA which providesIcmax-325 mA. answer the following:1. Calculate the power delivered to the load, VCC, ICQ, the input power, the powerdissipated by the transistor, and the circuit efficiency.2. Find the de base current, Find the MAX. and MIN. peak of the In current, and Findthe Icmin3. Calculate the resistance at the primary coil, and the load resistance if thetransformer ratio is (25:5), then Draw a circle diagram, explain the circuitconnection type, and (according to the efficiency, is this circuit type a suitable ornot for this efficiency?).40035030025020015010050Alc (mA)14 mA12 mA10 mA8 mA6 mA4 mAIB = 2 mAL510152025VCE (V)

The exact values for resistors (R1, R2, and R3) and the inductor (L) to calculate specific values…

Answered: IQ1] By using an ideal class A…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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2. (i) xplain the working principle of an NPN transistor as an amplifier them.
"Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base." Why? How does that actually work? My professor wants a detailed, engineering level explanation for this, and I am struggling to understand this to the degree he is asking. He says having both a positive and negative voltage source at the emitter bias is not necessary, and won't accept this as part of the explanation. Thanks!
In reference to the given figure, VCB = 10.3V and VBE = 0.7V. NOTES: VCB = VC-VB VBE = VB-VE In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RC, in kilo-ohms? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the voltage of RB, in volts? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RB in kilo-ohms, if Beta=100?
estion 2: Consider the BJT circuit given here. ( Write the input and output loop equations For the given values of Vcc= 10 V, Vin = 4V and resistor values, calculate all current values (IB, IC and IE) and VCE Assume that the ß for the transistor is 100 and the voltage drop across LED connected between Collector terminal and resistor (Rc) 2.1 V. TH i. ii. 111. VIN Vcc Rg=100 kΩ Re=2 kΩ LED 2.1 V B= 100 Based on the above analysis, correctly identify the current mode of operation Cutoff mode Active linear mode Saturation mode
Design a feasible class A silicon BJT Power Amplifier that provides a high voltagegain using 15 volts supply and employs a concept to increase its loaded efficiency to50% so that little power loss is provided at the collector terminal.Given by manufacturer for safe operation, the amplifying component has a DCcurrent gain of 200 and a collector current limit of 4mA. The output stage of theAmplifier drives a headphone with 32-ohms load impedance applicable forsmartphones.
a) Find the operating point current and voltage values of the non-linear element, in resistor R3 Calculate the voltage generated by the constant sources. b) Draw the circuit equivalent by linearizing the nonlinear element at the operating point. c) Using linearized equivalent small signal source j (t) to occur at R3 resistance calculate the voltage brought by it and give the expression of the VR3 voltage (constant sources and small sign sum of voltages generated by the source). E1=A=3 E2=B=8
Help answer these questions, much appreciated
1.
In an NPN transistor used as an amplifier, which components or connections control the current flow between the others? Pick those that apply. Either N-doped regions. The base, symbolized by B controls the current between the emitter, symbolized by E, and the collector, symbolized by C. The emitter, symbolized by E controls the current between the base, symbolized by B, and the collector, symbolized by C. The P-doped depletion region.
The MOSFET based circuit shown in the figure below is used for the purpose of small signal and V are small signal input and output voltages respectively, then the circuit analysis. If V represents sig (a) Common source amplifier (c) Common drain amplifier Vsig ww RG (b) Source follower amplifier (d) Common gate amplifier
% 07 Electronics Pr.. Electronics-Problems Second Sem. 2017-2018 Problem-1 Determine IB, Ic, Ie, VBE, VCE, and VCB in the circuit of Figure below. The transistor has a Bpc = 150. Rc100n Rg Vcc 10 V 10 kn VBB 5 V

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