In the given common-gate amplifier circuit below, the voltage source Vg is a constant voltage source that, along with the DC component of the input voltage, sets the quiescent drain current of the PMOS transistor such that gm-3ms. The transistor also has A-0, Ces=4pF and Ced=200fF. The amplifier is fed with an input source having Rin=5kn, has a load resistance R, =10kn and a load capacitance C, =2pF. Derive the transfer function and answer the questions below. Express your answer up to 3 decimal places. a. DC gain (in dB) b. frequency of the dominant pole (wo1, in Mrad/sec) c. frequency of the non-dominant pole (wo2, in Grad/sec) d. output resistance of the transistor (choices: 100kn, 1kn, 10OMN, infinity) Rin VIN OVOUT RL CL VB

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In the given common-gate amplifier circuit below, the voltage source Vg is a constant voltage source that, along with the DC component of the input voltage, sets the
quiescent drain current of the PMOS transistor such that gm=3mS. The transistor also has A-0, Ces=4pF and Ce=200FF. The amplifier is fed with an input source having
Rin=5kn, has a load resistance R =10kn and a load capacitance C, =2pF. Derive the transfer function and answer the questions below. Express your answer up to 3 decimal
places.
a. DC gain (in dB)
b. frequency of the dominant pole (w,1, in Mrad/sec)
c. frequency of the non-dominant pole (wp2, in Grad/sec)
d. output resistance of the transistor (choices: 100kn, 1kn, 10OMO, infinity)
Rin
VIN
OVOUT
RL
CL
VB
Transcribed Image Text:In the given common-gate amplifier circuit below, the voltage source Vg is a constant voltage source that, along with the DC component of the input voltage, sets the quiescent drain current of the PMOS transistor such that gm=3mS. The transistor also has A-0, Ces=4pF and Ce=200FF. The amplifier is fed with an input source having Rin=5kn, has a load resistance R =10kn and a load capacitance C, =2pF. Derive the transfer function and answer the questions below. Express your answer up to 3 decimal places. a. DC gain (in dB) b. frequency of the dominant pole (w,1, in Mrad/sec) c. frequency of the non-dominant pole (wp2, in Grad/sec) d. output resistance of the transistor (choices: 100kn, 1kn, 10OMO, infinity) Rin VIN OVOUT RL CL VB
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