In the following circuits, solve for the drain current, assuming all devices have IVTh| = 2 V and exhibit |ID(sat)| = 2 mA when |Vesl = 3 V. (Check your answers using KVL!) (a) ΙΜΩ 4 ΜΩ www w 5V -5 V 250 Ω (b) 5V 650 ΚΩ ΙΚΩ 125.2 350 ΚΩ ΣΚΩ -5V

For the following circuit, the diodes are silicon with a forward barrier voltage of 0.7-V. Calculate ID, ID2, D3, and VA using the following steps: ↓ +5 V ww R₁ = 5kQ VA D₁ D₂7 IDI R, = 5 kΩ -10 V 11p2 ID3 -5 V D3 VB R3= 5 kQ2 ↓ a) Assume all of the diodes are forward-biased and conducting. Redraw the circuit. Therefore, ideal voltage sources can be substituted for ID₁, D₂ and ID3. What are the values of V₁ and V?

What is power dissipation in the Zener diode as shown for (a) RL = 2kΩ (b) RL = 4.7kΩ (c) RL =15 kΩ (d) RL =∞

can you solve this question handwritten  step by step solution with explanation how we obtaines the graph this question is not a part of an assignment its a study question

QUESTION 2 (a) A multirange ammeter needs to be designed with four measurement ranges: PIS Come to wha +6-172917209 Range 1: 0 – 1 mA Range 2: 0 – 20 mA Range 3: 0 – 50 mA Range 4: 0 – 100 mA foC A D’Arsonval meter movement with an internal resistance of 500 SN and full scale Ray current of 100 µA is used. i) Design each resistor values for the multirange ammeter using the principle of Aryton Shunt. wak ii) If you were to construct this ammeter, how would you arrange the resistors? Sketch a schematic diagram to show your design. mongy (b) multirange DC voltmeter can be designed either with the multiplier resistors connected in shunts or in series. bwena D'Arsonval meter movement with Im = 100 µA and Rm 1.4 kQ is to be converted into a multirange DC voltmeter for ranges of 5 V, 10 V, 20 V and 50 V. Calculate the multiplier resistor values for both types of design. ii) Based on the calculation results, give your opinion on which design is better and provide your reason.

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Answers can be found at www.pearsonhighered.com/floyd. 1. The JFET is (a) a unipolar device (b) a voltage-controlled device (c) a current-controlled device (d) answers (a) and (c) (e) answers (a) and (b) 2. The channel of a JFET is between the (a) gate and drain (b) drain and source (c) gate and source (d) input and output 3. A JFET always operates with (a) the gate-to-source pn junction reverse-biased (b) the gate-to-source pn junction forward-biased (c) the drain connected to ground (d) the gate connected to the source 4. For VGs = 0 V, the drain current becomes constant when Vps exceeds (a) cutoff (b) VDD (c) Vp (d) 0 V 5. The constant-current region of a FET lies between (a) cutoff and saturation (b) cutoff and pinch-off (c) 0 and Ipss (d) pinch-off and breakdown 6. Ipss is (a) the drain current with the source shorted (b) the drain current at cutoff (c) the maximum possible drain current (d) the midpoint drain current 7. Drain current in the constant-current region increases when…

%01 K/s docs.google.com/for От * 7 (B) Calculate the current through the zener diode for the given values of load resistance in this circuit: 1- Rioad =2 k 2- Rioad =3 kS Reries 2.2 k2 V. Sorce = 30 V Rond V2= 12.5 V

The nominal PIV of the diodes in the figure is reduced, the current through RL is:(a) increases (b) decreases (c) does not change.

A Si solar cell has a short-circuit current of 100 mA and an open-circuit voltage of 0.8 V under full solar illumination. The fill factor is 0.7. What is the maximum power delivered to a load by this cell?