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In the dynamic random access memory (DRAM) of a computer, each memory cell contains a capacitor for charge storage. Each of these cells represents a single binary- bit value of “1" when its 35-fF capacitor (1 fF = 10-15F) is charged at 1.5 V, or "0" when uncharged at 0 V. (a) When fully charged, how many excess electrons are on a cell capacitor's negative plate? (b) After charge has been placed on a cell capacitor's plate, it slowly “leaks" off at a rate of about 0.30 fC/s. How long does it take for the potential difference across this capacitor to decrease by 2.0% from its fully charged value? (Because of this leakage effect, the charge on a DRAM capacitor is “refreshed" many times per second.) Note: A DRAM cell is shown in Fig. 21–29.

In the dynamic random access memory (DRAM) of a computer, each memory cell contains a capacitor for charge storage. Each of these cells represents a single binary- bit value of “1" when its 35-fF capacitor (1 fF = 10-15F) is charged at 1.5 V, or "0" when uncharged at 0 V. (a) When fully charged, how many excess electrons are on a cell capacitor's negative plate? (b) After charge has been placed on a cell capacitor's plate, it slowly “leaks" off at a rate of about 0.30 fC/s. How long does it take for the potential difference across this capacitor to decrease by 2.0% from its fully charged value? (Because of this leakage effect, the charge on a DRAM capacitor is “refreshed" many times per second.) Note: A DRAM cell is shown in Fig. 21–29.

College Physics
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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In the dynamic random access memory (DRAM) of a computer, each memory cell contains a capacitor for charge storage. Each of these cells represents a single binary- bit value of “1" when its 35-fF capacitor (1 fF = 10-15F) is charged at 1.5 V, or "0" when uncharged at 0 V. (a) When fully charged, how many excess electrons are on a cell capacitor's negative plate? (b) After charge has been placed on a cell capacitor's plate, it slowly “leaks" off at a rate of about 0.30 fC/s. How long does it take for the potential difference across this capacitor to decrease by 2.0% from its fully charged value? (Because of this leakage effect, the charge on a DRAM capacitor is “refreshed" many times per second.) Note: A DRAM cell is shown in Fig. 21–29.
Transcribed Image Text:In the dynamic random access memory (DRAM) of a computer, each memory cell contains a capacitor for charge storage. Each of these cells represents a single binary- bit value of “1" when its 35-fF capacitor (1 fF = 10-15F) is charged at 1.5 V, or "0" when uncharged at 0 V. (a) When fully charged, how many excess electrons are on a cell capacitor's negative plate? (b) After charge has been placed on a cell capacitor's plate, it slowly “leaks" off at a rate of about 0.30 fC/s. How long does it take for the potential difference across this capacitor to decrease by 2.0% from its fully charged value? (Because of this leakage effect, the charge on a DRAM capacitor is “refreshed" many times per second.) Note: A DRAM cell is shown in Fig. 21–29.
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