In the circuit of the figure below, assume that Rs = R₁ = 20092, Rt = 50 k2, and vs = 400 sin cot V. The diode is ideal, with reverse saturation current Io = 2 μ A and a peak inverse voltage (PIV) rating of V₁ = 100 V. (a) Will the diode fail in avalanche breakdown? (b) If the diode will fail, is there a value of RL for which failure will not occur? VS Rs R₁ ww ip + UD D RL VL

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In the circuit of the figure below, assume that Rs = R₁ = 20092, Rt = 50 k2, and vs = 400 sin oot V. The diode
is ideal, with reverse saturation current Io = 2 μ A and a peak inverse voltage (PIV) rating of V₁ = 100 V.
(a) Will the diode fail in avalanche breakdown? (b) If the diode will fail, is there a value of RL for which
failure will not occur?
VS
Rs
R₁
a
ID
+ VD
D
RL
+
VL
Transcribed Image Text:In the circuit of the figure below, assume that Rs = R₁ = 20092, Rt = 50 k2, and vs = 400 sin oot V. The diode is ideal, with reverse saturation current Io = 2 μ A and a peak inverse voltage (PIV) rating of V₁ = 100 V. (a) Will the diode fail in avalanche breakdown? (b) If the diode will fail, is there a value of RL for which failure will not occur? VS Rs R₁ a ID + VD D RL + VL
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