In semiconductor lasers the lasing threshold current tends to decrease as temperature increases. Select one: O True False
In semiconductor lasers the lasing threshold current tends to decrease as temperature increases. Select one: O True False
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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![In semiconductor lasers the lasing threshold current tends to decrease as temperature increases.
Select one:
O True
O False](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff3f9a3c1-8c74-4404-8646-0d8401a1d2d1%2Ff5cfa03d-daaf-4b9b-adc4-86a613c54cfb%2F49xlh1n_processed.jpeg&w=3840&q=75)
Transcribed Image Text:In semiconductor lasers the lasing threshold current tends to decrease as temperature increases.
Select one:
O True
O False
![: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 J.s
Si
Ge
Ga As
-31
9.11 x 10
Kg
Eg (eV)
n; (cm
Hn (cm²/V – s)
Hp (cm²/V – s)
Ne (cm-3)
Ny (cm-3)
m/m.
m;/m.
Er (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
19
1.602 x 10
8.85 x 10
1.05 x 10-34 J – s
C
1500
3900
8500
12
€o
F/m
450
1900
400
1.04 x 1019
6 x 1018
4.45 x 1017
7.72 x 1018
2.78 x 1019
8.6 x 10-5 eV/K
26 mV (T
K
9.84 x 1018
KT/q
= 300 K)
0.082
0.98
0.067
26 meV (T
3 x 10 m/s
KT
300 K)
0.28
0.49
0.45
C
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
EgAlGa1- As (r) = 1.424 + 1.247x (eV)
Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV)
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff3f9a3c1-8c74-4404-8646-0d8401a1d2d1%2Ff5cfa03d-daaf-4b9b-adc4-86a613c54cfb%2Fdf3bz6_processed.jpeg&w=3840&q=75)
Transcribed Image Text:: Properties of Si, Ge, and GaAs at 300 K , and Some Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 J.s
Si
Ge
Ga As
-31
9.11 x 10
Kg
Eg (eV)
n; (cm
Hn (cm²/V – s)
Hp (cm²/V – s)
Ne (cm-3)
Ny (cm-3)
m/m.
m;/m.
Er (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
19
1.602 x 10
8.85 x 10
1.05 x 10-34 J – s
C
1500
3900
8500
12
€o
F/m
450
1900
400
1.04 x 1019
6 x 1018
4.45 x 1017
7.72 x 1018
2.78 x 1019
8.6 x 10-5 eV/K
26 mV (T
K
9.84 x 1018
KT/q
= 300 K)
0.082
0.98
0.067
26 meV (T
3 x 10 m/s
KT
300 K)
0.28
0.49
0.45
C
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
EgAlGa1- As (r) = 1.424 + 1.247x (eV)
Egin. Ga1-As (x) = 1.425 – 1.501r + 0.436x2 (eV)
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
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