In an ideal MOS capacitor p-type substrate has doping concentration of N =1.25 x 1015 cm 3, Eor = 0.36 x 10-12 F/cm, & voltage required to produce a surface potential of 0.035 V at the semiconductor-oxide layer interface = 1.04 x 10-12 F/cm, thickness of the oxide layer t = 1.8 um. The gate is V. (Upto three decimal places) (Assume that the Source and body terminals are grouunded)

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8 In an ideal MOS capacitor p-type substrate has doping concentration of N =1.25 x 1015 cm-3,
= 0.36 x 10-12 F/cm, &
= 1.04 x 10-12 F/cm, thickness of the oxide layer t = 1.8 um. The gate
Eor
voltage required to produce a surface potential of 0.035 V at the semiconductor-oxide layer interface
%3D
V. (Upto three decimal places)
(Assume that the source and body terminals are grounded)
is
Transcribed Image Text:8 In an ideal MOS capacitor p-type substrate has doping concentration of N =1.25 x 1015 cm-3, = 0.36 x 10-12 F/cm, & = 1.04 x 10-12 F/cm, thickness of the oxide layer t = 1.8 um. The gate Eor voltage required to produce a surface potential of 0.035 V at the semiconductor-oxide layer interface %3D V. (Upto three decimal places) (Assume that the source and body terminals are grounded) is
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