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In an ideal MOS capacitor p-type substrate has doping concentration of N =1.25 x 1015 cm 3, Eor = 0.36 x 10-12 F/cm, & voltage required to produce a surface potential of 0.035 V at the semiconductor-oxide layer interface = 1.04 x 10-12 F/cm, thickness of the oxide layer t = 1.8 um. The gate is V. (Upto three decimal places) (Assume that the Source and body terminals are grouunded)

In an ideal MOS capacitor p-type substrate has doping concentration of N =1.25 x 1015 cm 3, Eor = 0.36 x 10-12 F/cm, & voltage required to produce a surface potential of 0.035 V at the semiconductor-oxide layer interface = 1.04 x 10-12 F/cm, thickness of the oxide layer t = 1.8 um. The gate is V. (Upto three decimal places) (Assume that the Source and body terminals are grouunded)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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8 In an ideal MOS capacitor p-type substrate has doping concentration of N =1.25 x 1015 cm-3, = 0.36 x 10-12 F/cm, & = 1.04 x 10-12 F/cm, thickness of the oxide layer t = 1.8 um. The gate Eor voltage required to produce a surface potential of 0.035 V at the semiconductor-oxide layer interface %3D V. (Upto three decimal places) (Assume that the source and body terminals are grounded) is
Transcribed Image Text:8 In an ideal MOS capacitor p-type substrate has doping concentration of N =1.25 x 1015 cm-3, = 0.36 x 10-12 F/cm, & = 1.04 x 10-12 F/cm, thickness of the oxide layer t = 1.8 um. The gate Eor voltage required to produce a surface potential of 0.035 V at the semiconductor-oxide layer interface %3D V. (Upto three decimal places) (Assume that the source and body terminals are grounded) is
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