In a dynamic random access memory (DRAM) computer chip, each memory cell chiefly consists of a capacitor for charge storage. Each of these cells represents a single binary-bit value of 1 when its 35-fFfcapacitor (1fF=10^−15F) is charged at 1.5 V, or 0 when uncharged at 0 V. A)When it is fully charged, how many excess electrons are on a cell capacitor's negative plate? B) After charge has been placed on a cell capacitor's plate, it slowly "leaks" off (through a variety of mechanisms) at a constant rate of 0.30 fC/s. How long does it take for the potential difference across this capacitor to decrease by 1.0% from its fully charged value? (Because of this leakage effect, the charge on a DRAM capacitor is "refreshed" many times per second.) Express your answer to two significant figures and include the appropriate units.

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In a dynamic random access memory (DRAM) computer chip, each memory cell chiefly consists of a capacitor for charge storage. Each of these cells represents a single binary-bit value of 1 when its 35-fFfcapacitor (1fF=10^−15F) is charged at 1.5 V, or 0 when uncharged at 0 V.

A)When it is fully charged, how many excess electrons are on a cell capacitor's negative plate?

B)

After charge has been placed on a cell capacitor's plate, it slowly "leaks" off (through a variety of mechanisms) at a constant rate of 0.30 fC/s. How long does it take for the potential difference across this capacitor to decrease by 1.0% from its fully charged value? (Because of this leakage effect, the charge on a DRAM capacitor is "refreshed" many times per second.)
Express your answer to two significant figures and include the appropriate units.
 

 

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We are requested to solve for surplus electrons on the -ve plate of a cell capacitor.

We're also asked how long it takes for the potential difference across this capacitor to drop by 1%.

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