In a transistor amplifier, ß = 62, R₁ = 5000 and internal resistance of the transistor is 500. The voltage amplification of the amplifier will be 1) 500 2) 620 3) 780 4) 950

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Author:Raymond A. Serway, Chris Vuille
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Chapter1: Units, Trigonometry. And Vectors
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al)
radiation of wavelength shorter than 2480 nm
is incident on it. The forbidden band energy
for the semi conductor is (in eV)
1) 0.5
2) 0.9
3) 0.7
TRANSISTORS
27 In an npn transistor the base and collector
currents are 100 µ A and 9mA respectively.
4) 1.1
Then the emitter current will be
1)9.1mA
3) 3.91 μ Α
2) 18.2mA
4)18.2 μ Α
28. A transistor has a base current of 1mA and
emitter current 100mA. The current transfer
ratio will be
2 0.99 3) 1.1
4) 10.1
0.95. If the emitter
1) 0.9
E
29. A transistor has a
E
current is 10mA, then the collector current
will be
1) 9.5 mA 2) 10mA 3) 0.95mA 4) 95MA
30. In a transistor amplifier, ß = 62, R, =
%3D
5000 0 and internal resistance of the
transistor is 500 n. The voltage amplification
of the amplifier will be
1) 500
2) 620
3) 780
4) 950
343
Transcribed Image Text:al) radiation of wavelength shorter than 2480 nm is incident on it. The forbidden band energy for the semi conductor is (in eV) 1) 0.5 2) 0.9 3) 0.7 TRANSISTORS 27 In an npn transistor the base and collector currents are 100 µ A and 9mA respectively. 4) 1.1 Then the emitter current will be 1)9.1mA 3) 3.91 μ Α 2) 18.2mA 4)18.2 μ Α 28. A transistor has a base current of 1mA and emitter current 100mA. The current transfer ratio will be 2 0.99 3) 1.1 4) 10.1 0.95. If the emitter 1) 0.9 E 29. A transistor has a E current is 10mA, then the collector current will be 1) 9.5 mA 2) 10mA 3) 0.95mA 4) 95MA 30. In a transistor amplifier, ß = 62, R, = %3D 5000 0 and internal resistance of the transistor is 500 n. The voltage amplification of the amplifier will be 1) 500 2) 620 3) 780 4) 950 343
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