In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron concentration at 300K and 400K. Use the following for the calculations B=7.3 x 1015 /cm³ K³/2, Eg = 1.12 eV, kg = 8.62 x 10-5 eV/K. %3D %3D
In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron concentration at 300K and 400K. Use the following for the calculations B=7.3 x 1015 /cm³ K³/2, Eg = 1.12 eV, kg = 8.62 x 10-5 eV/K. %3D %3D
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