(i) At what wavelength are the rates of spontaneous emission and stimulated emission equal in a two-level system at room temperature? (ii) A GaAlAs laser diode has a 500 μm cavity length which has an effective absorption coefficient of 10 cm-1. For uncoated facets the reflectivities are 0.32 at each end. What is the optical gain at the lasing threshold? (iii) If one end of the laser is coated with a dielectric reflector so that its reflectivity is now 90%, what is the optical gain at the lasing threshold?
(i) At what wavelength are the rates of spontaneous emission and stimulated emission equal in a two-level system at room temperature? (ii) A GaAlAs laser diode has a 500 μm cavity length which has an effective absorption coefficient of 10 cm-1. For uncoated facets the reflectivities are 0.32 at each end. What is the optical gain at the lasing threshold? (iii) If one end of the laser is coated with a dielectric reflector so that its reflectivity is now 90%, what is the optical gain at the lasing threshold?
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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(i) At what wavelength are the rates of spontaneous emission and stimulated emission equal in a two-level system at room temperature? (ii) A GaAlAs laser diode has a 500 μm cavity length which has an effective absorption coefficient of 10 cm-1. For uncoated facets the reflectivities are 0.32 at each end. What is the optical gain at the lasing threshold? (iii) If one end of the laser is coated with a dielectric reflector so that its reflectivity is now 90%, what is the optical gain at the lasing threshold?
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