Electronics 1. A silicon pn junction diode at room temperature is doped with NA- 2x1016/cm' in the p-region and Np 107 /cm' in the n-region. Assume that theintrinsic carrier concentration n= 101° /cm' and band gap energy Eg-1.1 eV.Further assume that t,=1,=1 us, 4,=800cm?/V/s, 4,-200cm/V/s n=100.The relative permittivity of Si is ɛ, =11.8 and permittivity of free space isE=8.84x1014 F/cm.A forward bias voltage of VA-0.5 V is applied.%3D i) 1) Write down the equations for obtaining the current in the p- and n-sides.2) Why is the drift current due to minority carriers in the quasineutral p- and n-sides zero.) Calculate the minority carrier diffusion current density as a function ofdistance on the n-side and p-side of the device assuming a forwardbias of 0.5 V. Carefully plot and label your results.k) Assuming that the velocity of carriers within the depletion region isapproximately v=5x107 cm/sec, calculate the amount of timerequired for a carrier to cross the depletion region. Using your answerabove and the given minority carrier lifetimes justify the diodeassumption which states that there is no recombination in thedepletion region.

A semiconductor pn junction diode is a two-terminal device that allows current to flow in one…

i) 1) Write down the equations for obtaining the current in the p- and n- sides. 2) Why is the drift current due to minority carriers in the quasi neutral p- and n-sides zero. j) Calculate the minority carrier diffusion current density as a function of distance on the n-side and p-side of the device assuming a forward bias of 0.5 V. Carefully plot and label your results.

i) 1) Write down the equations for obtaining the current in the p- and n- sides. 2) Why is the drift current due to minority carriers in the quasi neutral p- and n-sides zero. j) Calculate the minority carrier diffusion current density as a function of distance on the n-side and p-side of the device assuming a forward bias of 0.5 V. Carefully plot and label your results.