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How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron) 2 area and doped with acceptors and donors at 4.85 10^15/cc, and forward bias of 0.56 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V"s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Selected Answer: Correct Answer: O 5,200 896

How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron) 2 area and doped with acceptors and donors at 4.85 10^15/cc, and forward bias of 0.56 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V"s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Selected Answer: Correct Answer: O 5,200 896

Database System Concepts
Database System Concepts
7th Edition
ISBN:9780078022159
Author:Abraham Silberschatz Professor, Henry F. Korth, S. Sudarshan
Publisher:Abraham Silberschatz Professor, Henry F. Korth, S. Sudarshan
Chapter1: Introduction
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How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 4.85*10^15/cc, and forward bias of 0.56 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Selected Answer: Correct Answer: O 5,200 + 896
Transcribed Image Text:How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 4.85*10^15/cc, and forward bias of 0.56 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Selected Answer: Correct Answer: O 5,200 + 896
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