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How is ni 1.8 ×10^6 cm^-3 ?? Its not given in the question .

How is ni 1.8 ×10^6 cm^-3 ?? Its not given in the question .

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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How is ni 1.8 ×10^6 cm^-3 ?? Its not given in the question .
7:56 (а) Equation for electron hole recombination rate in terms of excess electron concentration and excess carrier lifetime is R = Here Sn(1) is excess electron concentration, R is electron hole recombination rate and r is excess carrier lifetime. Substitute 5x10" cm' for Sn and 5x10 s for r R_ =- (5x10“ cm) (5x10" s) = 10" cm's Therefore electron hole recombination rate is R = 10" cm's" Step2 b) (b) In semiconductor "Po = n} P. Here n, and P, are the thermal-equilibrium concentrations of electrons and holes. Again P. = N. = 2x10" cm Now n,= P. Substitute 1,8 x 10° cm for n, and 2x10" cm"for Po. P. (1.8×10* cm") (2x10" cm") =1.62 x10 cm Recombination rates are equal for both electrons and holes Therefore - P. PaxT II
Transcribed Image Text:7:56 (а) Equation for electron hole recombination rate in terms of excess electron concentration and excess carrier lifetime is R = Here Sn(1) is excess electron concentration, R is electron hole recombination rate and r is excess carrier lifetime. Substitute 5x10" cm' for Sn and 5x10 s for r R_ =- (5x10“ cm) (5x10" s) = 10" cm's Therefore electron hole recombination rate is R = 10" cm's" Step2 b) (b) In semiconductor "Po = n} P. Here n, and P, are the thermal-equilibrium concentrations of electrons and holes. Again P. = N. = 2x10" cm Now n,= P. Substitute 1,8 x 10° cm for n, and 2x10" cm"for Po. P. (1.8×10* cm") (2x10" cm") =1.62 x10 cm Recombination rates are equal for both electrons and holes Therefore - P. PaxT II
2 GaAs at T=300K is uniformly doped with donor impurity atoms to a concentration of Ng = 2 10 x 106 cm. Assume an excess carrier lifetime of 5 x 10" s. a) Determine the excess electron-hole recombination rate if the excess hole concentration is õp= 5 x 10" cm, b) What is the lifetime of electrons? c) Determine the thermal equilibrium recombination rate of holes.
Transcribed Image Text:2 GaAs at T=300K is uniformly doped with donor impurity atoms to a concentration of Ng = 2 10 x 106 cm. Assume an excess carrier lifetime of 5 x 10" s. a) Determine the excess electron-hole recombination rate if the excess hole concentration is õp= 5 x 10" cm, b) What is the lifetime of electrons? c) Determine the thermal equilibrium recombination rate of holes.
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