High-frequency voltage of magnitude V, = 10 V is applied to a parallel-plate capacitor, the plates of which are d = 1 mm apart. The dielectric has complex relative permittivity &, = 10- j10. 1) Find the E-field phasor inside the capacitor.

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Electrical Engineering
Constitutive Relations in the Frequency Domain: Example 1
High-frequency voltage of magnitude Vo = 10 V is applied to a
parallel-plate capacitor, the plates of which are d = 1 mm apart. The
dielectric has complex relative permittivity &, =10– jl0.
1) Find the E-field phasor inside the capacitor.
2) Find the D phasor inside the capacitor.
3) Find the phasor of the surface charge density p, at the plates.
4) Sketch the E and D phasor vectors in the complex plane.
5) What is the dielectric loss tangent tanð¿?
6) What is the equivalent (or effective) conductivity O provided
that the frequency is 3 GHz?
Transcribed Image Text:Electrical Engineering Constitutive Relations in the Frequency Domain: Example 1 High-frequency voltage of magnitude Vo = 10 V is applied to a parallel-plate capacitor, the plates of which are d = 1 mm apart. The dielectric has complex relative permittivity &, =10– jl0. 1) Find the E-field phasor inside the capacitor. 2) Find the D phasor inside the capacitor. 3) Find the phasor of the surface charge density p, at the plates. 4) Sketch the E and D phasor vectors in the complex plane. 5) What is the dielectric loss tangent tanð¿? 6) What is the equivalent (or effective) conductivity O provided that the frequency is 3 GHz?
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