Froment An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus, each of mass mp=5.18 x 1026 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re=42 cm before they strike the silicon layer with velocity vp 105 m/s. Randomized Variables re= 42 cm Vp 105 m/s Part (a) Enter an expression for the potential difference AV, in volts, between the initial and final points across the vacuum chamber, AV-vp/2 ye Attempts Remain Part (b) Calculate the average electric field strength E, in volts per meters, across the vacuum chamber.
Froment An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus, each of mass mp=5.18 x 1026 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re=42 cm before they strike the silicon layer with velocity vp 105 m/s. Randomized Variables re= 42 cm Vp 105 m/s Part (a) Enter an expression for the potential difference AV, in volts, between the initial and final points across the vacuum chamber, AV-vp/2 ye Attempts Remain Part (b) Calculate the average electric field strength E, in volts per meters, across the vacuum chamber.
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
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![An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of
phosphorus, each of mass mp=5.18 x 1026 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest
at one end of the vacuum chamber and are accelerated by an electric field over a distance of re = 42 cm before they strike the silicon layer with velocity vp=
105 m/s.
Randomized Variables
re= 42 cm
Vp = 105 m/s
Part (a) Enter an expression for the potential difference AV, in volts, between the initial and final points across the vacuum chamber,
AV vp/2 ye Attempts Remain
Part (b) Calculate the average electric field strength E, in volts per meters, across the vacuum chamber.
Part (c) Calculate the average electric force F, in newtons, that the electric field exerts on each phosphorus ions.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F960b7aa6-65e4-4d44-a061-488cdaf9cc93%2F5925465c-6761-491e-aa21-6774d57a0a92%2F7s6jeq7_processed.jpeg&w=3840&q=75)
Transcribed Image Text:An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of
phosphorus, each of mass mp=5.18 x 1026 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest
at one end of the vacuum chamber and are accelerated by an electric field over a distance of re = 42 cm before they strike the silicon layer with velocity vp=
105 m/s.
Randomized Variables
re= 42 cm
Vp = 105 m/s
Part (a) Enter an expression for the potential difference AV, in volts, between the initial and final points across the vacuum chamber,
AV vp/2 ye Attempts Remain
Part (b) Calculate the average electric field strength E, in volts per meters, across the vacuum chamber.
Part (c) Calculate the average electric force F, in newtons, that the electric field exerts on each phosphorus ions.
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