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For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular device Ip(on) = 200 mA at VGS(on) = 4 V, VGS(TH) = 2 V, gm = 23 ms. VDD +15 V RD C2 V R1 3.3 k2 47 k2 10 uF 0.1 µF R 33 kN 8.2 k2 а. -14.8 b. -11.6 O C. -4.3

For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular device Ip(on) = 200 mA at VGS(on) = 4 V, VGS(TH) = 2 V, gm = 23 ms. VDD +15 V RD C2 V R1 3.3 k2 47 k2 10 uF 0.1 µF R 33 kN 8.2 k2 а. -14.8 b. -11.6 O C. -4.3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AVL)? Assume that for this particular device Ip(on) = 200 mA at VGS(on) = 4 V, VGS(TH) = 2 V, gm = 23 mS. VDD +15 V RD C2 V. R1 47 k2 3.3 k2 10 uF 0.1 µF R2 8.2 k2 R 33 kN o a. -14.8 b. -11.6 ос. -4.3 d. -45.6 о е. -21.7 f. -69 -33.3 Oh. -59.6 O O
Transcribed Image Text:For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AVL)? Assume that for this particular device Ip(on) = 200 mA at VGS(on) = 4 V, VGS(TH) = 2 V, gm = 23 mS. VDD +15 V RD C2 V. R1 47 k2 3.3 k2 10 uF 0.1 µF R2 8.2 k2 R 33 kN o a. -14.8 b. -11.6 ос. -4.3 d. -45.6 о е. -21.7 f. -69 -33.3 Oh. -59.6 O O
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