For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular device Ip(on) = 200 mA at VGS(on) = 4 V, VGS(TH) = 2 V, gm = 23 ms. VDD +15 V RD C2 V R1 3.3 k2 47 k2 10 uF 0.1 µF R 33 kN 8.2 k2 а. -14.8 b. -11.6 O C. -4.3

For the E-MOSFET curcuit shown below, what is the value of the voltage gain (AyL)? Assume that for this particular device Ip(on) = 200 mA at VGS(on) = 4 V, VGS(TH) = 2 V, gm = 23 ms. VDD +15 V RD C2 V R1 3.3 k2 47 k2 10 uF 0.1 µF R 33 kN 8.2 k2 а. -14.8 b. -11.6 O C. -4.3

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

For the E-MOSFET curcuit shown below, what is
the value of the voltage gain (AVL)? Assume that
for this particular device Ip(on) = 200 mA at VGS(on)
= 4 V, VGS(TH) = 2 V, gm = 23 mS.
VDD
+15 V
RD
C2
V.
R1
47 k2
3.3 k2
10 uF
0.1 µF
R2
8.2 k2
R
33 kN
o a.
-14.8
b.
-11.6
ос.
-4.3
d.
-45.6
о е.
-21.7
f.
-69
-33.3
Oh.
-59.6
O O

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