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For the circuit shown below, identify the logic function performed by it. Also determine the high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for a fan-out of 5. Assume that input diode has a leakage current of 100 μA. Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor leakage current is negligible. 11H Ao- Во Co D₁ D₂ KH ww • 20 ΚΩ P₁ P₂ D5 10 ΚΩ D₁ 10 ΚΩ T₂ 9 +5V Rp Іон

For the circuit shown below, identify the logic function performed by it. Also determine the high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for a fan-out of 5. Assume that input diode has a leakage current of 100 μA. Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor leakage current is negligible. 11H Ao- Во Co D₁ D₂ KH ww • 20 ΚΩ P₁ P₂ D5 10 ΚΩ D₁ 10 ΚΩ T₂ 9 +5V Rp Іон

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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For the circuit shown below, identify the logic function performed by it. Also determine the high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for a fan-out of 5. Assume that input diode has a leakage current of 100 μA. Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor leakage current is negligible. 1H Ao- Во Co D₂ D 20 ΚΩ P₁ P₂ 10 kQ D₁ www 10 ΚΩ >+5V Rp Іон
Transcribed Image Text:For the circuit shown below, identify the logic function performed by it. Also determine the high level fan-out, if Rp(pull-up resistor) = 10 ks. Compute the maximum value of Rp for a fan-out of 5. Assume that input diode has a leakage current of 100 μA. Given: V₁ = 0.7V, V (forward voltage drop) = 0.8V, VBE(cut-in) = 0.5V, VCE(sat) = 0.2V. Transistor leakage current is negligible. 1H Ao- Во Co D₂ D 20 ΚΩ P₁ P₂ 10 kQ D₁ www 10 ΚΩ >+5V Rp Іон
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