For the 3-ph, double circuit O.H.T.L shown below: 1- Find the spacing between the two conductors in the double bundle constructing each phase such that the voltage drop across this 380 km transmission line should not exceed 20 kV when this transmission line supplies a load with an apparent power of S in MVA at 0.85 lagging power factor at 240 kV, where S = 200 + LL and LL is the last two digits (from right) of your registration number. Each conductor in the bundle has a radius of 0.0552 ft and a geometric mean radius (Ds = 1.69 cm). %3D %3D 2- Find the total charging current and the total reactive power generated by the capacitive effect of this transmission line. 3- Suggest a way to reduce this voltage drop to 10 kV. Verify your answer. C2 A1 3m| 8 m B1 A2 B2 +6 m

For the 3-ph, double circuit O.H.T.L shown below: 1- Find the spacing between the two conductors in the double bundle constructing each phase such that the voltage drop across this 380 km transmission line should not exceed 20 kV when this transmission line supplies a load with an apparent power of S in MVA at 0.85 lagging power factor at 240 kV, where S = 200 + LL and LL is the last two digits (from right) of your registration number. Each conductor in the bundle has a radius of 0.0552 ft and a geometric mean radius (Ds = 1.69 cm). %3D %3D 2- Find the total charging current and the total reactive power generated by the capacitive effect of this transmission line. 3- Suggest a way to reduce this voltage drop to 10 kV. Verify your answer. C2 A1 3m| 8 m B1 A2 B2 +6 m

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Silicon semiconductor diode find the voltage in the circuit below.
Please find and draw the voltage over the load resistance, RL. Hint: 1N4148 is a Si-based diode. You have to show all the calculation details and verbal explanations.
6.INSTRUCTION: SOLVE FOR THE REQUIRED PARAMETERS.
Analyze the output voltage Vo in the network efficiently for triangular input signal Vi shown in Figure 2. Apply ideal diode model for solution. Hint: Show your calculation for each of the positive and negative half cycle and Draw the output voltage with respect to input voltage. (X+4) V Vo (X+4) V ZV X=6, Y =6 Figure 2
For each circuit in the image, asume ideal diodes and find the value of the current and the voltage
Subject: Circuits INote:Support the problems with circuit diagram and label the pertinent parts and also complete solution so that i can learn too
Find the current through the diode, assuming the diode is ideal
Determine the voltage across the resistor in below circuit assume Ge diode. 0.2 V 3 k2 0.44 V 0.2 V O V 0.09 V
Analyze the output voltage Vo in the network efficiently for sinusoidal input signal Vi shown in Figure 2. Apply ideal diode model for solution. Hint: Show your calculation for each of the positive and negative half cycle and Draw the output voltage with respect to input voltage. X-6, Y =6 D1 Vi (Y+1) V (X+5)V Vo Figure 2
Which conditions satisfy an ideal diode?a. ID = 4 mA, VD = 0 V b. ID = -4 mA, VD = 0 V c. ID = 4 mA, VD = 2 V d. ID = -4 mA, VD = 2 V
Doped Silicon is called Select one: Ca None of these
2. Compute for the Vo and Io in the direction of the blue arrow. Assume that the diode used is an approximate model of a silicon Diode. 1,6k, +24V ww + Vo 3.9k -8V