Homework Help is Here – Start Your Trial Now!
Engineering
Electrical Engineering
Q4. Assume a Si diode with p and n doping levels as described in Q1. Calculate the value of the built-in voltage at: (1) 20 °C (ii) 75 C (iii) 150 C Insert calculated values Temperature (C) Vo (V) 20 75 150

Q4. Assume a Si diode with p and n doping levels as described in Q1. Calculate the value of the built-in voltage at: (1) 20 °C (ii) 75 C (iii) 150 C Insert calculated values Temperature (C) Vo (V) 20 75 150

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
See similar textbooks
icon
Related questions
Question

Question 4 in photo please, i also attached Q1 with the Si diode with p and n doping levels

Q1. Calculate the built in potential Vo that will be formed across the p-n junction (no bias) between p-type material with a doping level NA = 1 x 1015 cm3 and n-type material with a doping level of ND = 1x 1016 cm3. Also calculate the height of the potential energy barrier that will prevent majority carriers from crossing over this barrier. Do the above calculations for three semiconductors: (i) Silicon (ii) Germanium (ii) Gallium Arsenic Answer: Semiconductor Vo (V) Ер (eV) Silicon 0.6375 Germanium 0.2633 GaAs 1.101
Transcribed Image Text:Q1. Calculate the built in potential Vo that will be formed across the p-n junction (no bias) between p-type material with a doping level NA = 1 x 1015 cm3 and n-type material with a doping level of ND = 1x 1016 cm3. Also calculate the height of the potential energy barrier that will prevent majority carriers from crossing over this barrier. Do the above calculations for three semiconductors: (i) Silicon (ii) Germanium (ii) Gallium Arsenic Answer: Semiconductor Vo (V) Ер (eV) Silicon 0.6375 Germanium 0.2633 GaAs 1.101
Q4. Assume a Si diode with p and n doping levels as described in Q1. Calculate the value of the built-in voltage at: (1) 20 C (ii) 75 °C (iii) 150 C Insert calculated values Temperature (C) Vo (V) 20 75 150
Transcribed Image Text:Q4. Assume a Si diode with p and n doping levels as described in Q1. Calculate the value of the built-in voltage at: (1) 20 C (ii) 75 °C (iii) 150 C Insert calculated values Temperature (C) Vo (V) 20 75 150
Expert Solution
steps

Step by step

Solved in 7 steps with 5 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Follow-up Questions
Read through expert solutions to related follow-up questions below.
Follow-up Question

For Q4 (i) and similar thing to (ii) and (iii)

When calculating ni1/ni2 = (300/293.15)^1.5 I got ni2 = 1.035ni1 and don't know why you guy got 0.9659ni1 is there anything that I miss?

Solution
Bartleby Expert
SEE SOLUTION
Knowledge Booster
Three Phase Controlled and Uncontrolled Rectifiers
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,
SEE MORE TEXTBOOKS