For Ge semiconductor, assume the Fermi energy level is 0.1 ev below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 2. x kbT ii. Determine the probability of a state being empty of an electron at Ec+2. x kbT. Find the temperature at which there is an electron at the ii. state Ec+0.2 x kbT with probability 30% Ronont itom ii bu ucing the Reltzman aprevi mation
For Ge semiconductor, assume the Fermi energy level is 0.1 ev below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec + 2. x kbT ii. Determine the probability of a state being empty of an electron at Ec+2. x kbT. Find the temperature at which there is an electron at the ii. state Ec+0.2 x kbT with probability 30% Ronont itom ii bu ucing the Reltzman aprevi mation
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Transcribed Image Text:For Ge semiconductor, assume the Fermi energy level
is 0.1 ev below the conduction band energy Ec. Let the
absolute temperature T for items i and ii be 200 K.
i.
Find the number of quantum states between Ec and Ec +
2. x kbT
Determine the probability of a state being empty of an
ii.
electron at Ec+2. x kbT.
ii.
Find the temperature at which there is an electron at the
state Ec+0.2 x kbT with probability 30%
iv.
Repeat item ii by using the Boltzmann approximation
rather than the Fermi-Dirac distribution
Find the difference in temperature between items i and
v.
iv above and express this difference as percentage
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