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Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(0.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3, µn=1200 Cm2/V.sec & µp=400Cm^2/V.sec

Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(0.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3, µn=1200 Cm2/V.sec & µp=400Cm^2/V.sec

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(0.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3 , µn=1200 Cm2/V.sec & µp=400Cm^2/V.sec
Transcribed Image Text:Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(0.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3 , µn=1200 Cm2/V.sec & µp=400Cm^2/V.sec
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