Figure 2 shows the E-MOSFET circuit. Assuming that, the particular MOSFET has minimum value of Ip(on) = 200 mA at VGs = 4 V and VGsah) =2 V. Calculate the VGS and VDs for the E-MOSFET circuit if VDD= 30 V, RD = 210 N, RI = 120 k and R2 (b) %3D = 20 k2. [Rajah 2 menunjukkan litar E-MOSFET. Dengan mengandaikan bahawa, MOSFET tertentu mempunyai nilai minimum Ip(on) = 200 mA pada VGs = 4 V dan VGS (ah) = 2 V. Hitung VGs dan VDs untuk litar E-MOSFET jika VDD = 30 V, RD = 210 2, R1 = 120 k2 dan R2 = 20 k2.1 VDD Rp R1 Figure 2 [Rajah 2]

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answer question 2.b)
(b)
Figure 2 shows the E-MOSFET circuit. Assuming that, the particular MOSFET has
minimum value of Ip(on) = 200 mA at VGs = 4 V and VGSah) =2 V. Calculate the VGS
and VDs for the E-MOSFET circuit if VDD= 30 V, RD = 210 N, R1 = 120 k and R2
%3D
= 20 k2.
[Rajah 2 menunjukkan litar E-MOSFET. Dengan mengandaikan bahawa, MOSFET tertentu
mempunyai nilai minimum Ip(on) = 200 mA pada VGs = 4 V dan VGS ah) = 2 V. Hitung VGs dan VDs
untuk litar E-MOSFET jika VDD = 30 V, RD = 210 2, R1 = 120 k2 dan R2 = 20 k2.1
VDD
Rp
R1
Figure 2
[Rajah 2]
Transcribed Image Text:(b) Figure 2 shows the E-MOSFET circuit. Assuming that, the particular MOSFET has minimum value of Ip(on) = 200 mA at VGs = 4 V and VGSah) =2 V. Calculate the VGS and VDs for the E-MOSFET circuit if VDD= 30 V, RD = 210 N, R1 = 120 k and R2 %3D = 20 k2. [Rajah 2 menunjukkan litar E-MOSFET. Dengan mengandaikan bahawa, MOSFET tertentu mempunyai nilai minimum Ip(on) = 200 mA pada VGs = 4 V dan VGS ah) = 2 V. Hitung VGs dan VDs untuk litar E-MOSFET jika VDD = 30 V, RD = 210 2, R1 = 120 k2 dan R2 = 20 k2.1 VDD Rp R1 Figure 2 [Rajah 2]
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