EXPERIMENTS WITH A SINGLE FACTOR: THE AN 1. An engineer is interested in determining if the RF power setting of the generator used in plasma etching process affects the etch rate, and she has run a completely randomized experiment with four levels of RF power and five replicates. The results of her experiment are given

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Determine the; *Conclusion *Hypothesis *Calculation
1. An engineer is interested in determining if the RF power
setting of the generator used in plasma etching process
affects the etch rate, and she has run a completely
randomized experiment with four levels of RF power and
five replicates. The results of her experiment are given
below:
RF Power
(W)
EXPERIMENTS WITH A SINGLE FACTOR: THE ANALYSIS OF VARIANCE
160
180
200
220
1
575
565
600
725
Observed Etch Rate (Å/min)
3
530
590
610
715
2
542
593
651
700
4
539
579
637
685
5
570
610
629
710
Use the analysis of variance to test Ho: M₁ = H₂ = μ3 = μ4
at a = 0.05. In case of significant difference on the means,
use the Tukey's HSD method with = 0.05 to make
comparisons between pairs of means
Plasma
Wafer
In many integrated circuit manufacturing steps, wafers are
completely coated with a layer of material such as silicon
dioxide or a metal. The unwanted material is then
selectively removed by etching through a mask, thereby
creating circuit patterns, electrical interconnects, and
areas in which diffusions or metal depositions are to be
made. A plasma etching process is widely used for this
operation, particularly in small geometry applications.
Transcribed Image Text:1. An engineer is interested in determining if the RF power setting of the generator used in plasma etching process affects the etch rate, and she has run a completely randomized experiment with four levels of RF power and five replicates. The results of her experiment are given below: RF Power (W) EXPERIMENTS WITH A SINGLE FACTOR: THE ANALYSIS OF VARIANCE 160 180 200 220 1 575 565 600 725 Observed Etch Rate (Å/min) 3 530 590 610 715 2 542 593 651 700 4 539 579 637 685 5 570 610 629 710 Use the analysis of variance to test Ho: M₁ = H₂ = μ3 = μ4 at a = 0.05. In case of significant difference on the means, use the Tukey's HSD method with = 0.05 to make comparisons between pairs of means Plasma Wafer In many integrated circuit manufacturing steps, wafers are completely coated with a layer of material such as silicon dioxide or a metal. The unwanted material is then selectively removed by etching through a mask, thereby creating circuit patterns, electrical interconnects, and areas in which diffusions or metal depositions are to be made. A plasma etching process is widely used for this operation, particularly in small geometry applications.
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