EXERCISES 3.7 Show that NNp N+N V, =

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EXERCISES
3.7 Show that
NNp
N+N
3.8 Show that for a pn junction in which the p side is much more heavily doped than the n side, (i.c.
N, > Np), referred to as a p'n diode, Eqs. (3.26). (3.27), (3.28), (3.29), and (3.30) can be simpli-
fied as follows:
2€,
W
(3.26')
(3.27')
I, (W/(N/Np))
(3.28')
Q, = AqNpW
(3.29)
(3.30')
3.9 If in the fabrication of the pn junction in Example 3.5, it is required to increase the minority carrier
concentration in the n region by a factor of 2, what must be done?
Ans. Lower Np by a factor of 2.
Transcribed Image Text:EXERCISES 3.7 Show that NNp N+N 3.8 Show that for a pn junction in which the p side is much more heavily doped than the n side, (i.c. N, > Np), referred to as a p'n diode, Eqs. (3.26). (3.27), (3.28), (3.29), and (3.30) can be simpli- fied as follows: 2€, W (3.26') (3.27') I, (W/(N/Np)) (3.28') Q, = AqNpW (3.29) (3.30') 3.9 If in the fabrication of the pn junction in Example 3.5, it is required to increase the minority carrier concentration in the n region by a factor of 2, what must be done? Ans. Lower Np by a factor of 2.
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