Exercise # 3 - MOSFET Bias The following circuit is used to bias an NMOS type MOSFET transistor. In the circuit, we want the DC voltage marked Vx to have a value of 0 V. provided by the transistor The following is data manufacturer: K 350μA / V² A (lambda) 50μV-¹ -5V VTH 0.64V Threshold voltage VB Part A - Calculation of current in the drain (ID) From the given information, determine the value of the current in the drain (I_D) Justify your result using proper circuit analysis techniques. Part B - Calculation of the voltage between Gate-Source (V GS) Considering the information and the analysis carried out up to this point, determine the value that the voltage between gate and source must have (VGS) Justify your result using proper circuit analysis techniques. Part C-Proof of the saturation condition Considering the information and analysis carried out up to this point, show that the transistor is in the conditions of the saturation region. s RB ROWN SkQ +5V RD 12kQ Vx

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Exercise # 3 - MOSFET Bias
The following circuit is used to bias an NMOS type MOSFET
transistor.
In the circuit, we want the DC voltage marked Vx to have a
value of 0 V.
provided by the transistor
The following is data
manufacturer:
K
350μA / V²
A (lambda)
50μV-¹
-5V
VTH
0.64V
Threshold voltage
VB
Part A - Calculation of current in the drain (ID)
From the given information, determine the value of the current in the drain (I_D)
Justify your result using proper circuit analysis techniques.
Part B - Calculation of the voltage between Gate-Source (V GS)
Considering the information and the analysis carried out up to this point, determine the value that
the voltage between gate and source must have (VGS)
Justify your result using proper circuit analysis techniques.
Part C-Proof of the saturation condition
Considering the information and analysis carried out up to this point, show that the transistor is in the
conditions of the saturation region.
Part D-Voltage Divider Design for Transistor Biasing
Given the operating conditions of the transistor obtained, design and dimension the necessary values
in the voltages VA and VB as well as the resistances RA and RB so that the circuit reaches the desired
operating conditions.
Considering that it is a design exercise, it is necessary that you make some assumptions such as
choosing one of the voltages or the resistances. These assumptions must be duly justified with the
analysis carried out.
s
RBL
ROWN
SkQ
+5V
RD
12kQ
Vx
Transcribed Image Text:Exercise # 3 - MOSFET Bias The following circuit is used to bias an NMOS type MOSFET transistor. In the circuit, we want the DC voltage marked Vx to have a value of 0 V. provided by the transistor The following is data manufacturer: K 350μA / V² A (lambda) 50μV-¹ -5V VTH 0.64V Threshold voltage VB Part A - Calculation of current in the drain (ID) From the given information, determine the value of the current in the drain (I_D) Justify your result using proper circuit analysis techniques. Part B - Calculation of the voltage between Gate-Source (V GS) Considering the information and the analysis carried out up to this point, determine the value that the voltage between gate and source must have (VGS) Justify your result using proper circuit analysis techniques. Part C-Proof of the saturation condition Considering the information and analysis carried out up to this point, show that the transistor is in the conditions of the saturation region. Part D-Voltage Divider Design for Transistor Biasing Given the operating conditions of the transistor obtained, design and dimension the necessary values in the voltages VA and VB as well as the resistances RA and RB so that the circuit reaches the desired operating conditions. Considering that it is a design exercise, it is necessary that you make some assumptions such as choosing one of the voltages or the resistances. These assumptions must be duly justified with the analysis carried out. s RBL ROWN SkQ +5V RD 12kQ Vx
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