Solve question 1 emiratesaviationuniversityEmirates dnataQuestionsi. Include necessary steps for all solutionsii. Round off to at least three decimal points for numerical solutions1. i) Give the structure and symbol of a p-n-p transistor with regions labelled.ii) Name the lightly doped terminal of BJT2. Determine IB, IC, IE, VCE, VCB for the given transistor if the dc gain is 100 andVcc 22 V. (Include steps for solution)3M(2+1)5MRe1.0 ΚΩRaww22 ΚΩPDC = 100VecVBB5V3. i. Convert to hexa decimal number system (show working): 235.6710ii. Determine the SOP expression for the given truth table using Karnaugh map:ABCF0001001101000111100 1101 11100111 04. i. Simplify using Boolean Algebra:AAB + ABC4M(2+2)13M(2+4+7)Fall 2024BUSINESS DOCUMENT This document is intended for business use and should be distributed to intended recipients only.Page 1 of 4

Step 1:i) Structure and Symbol of a PNP TransistorStructure of a PNP TransistorDefinition: A PNP…

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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Just need 1d and 1e answered.
In a two transistor model of SCR, the leakage current for transistor Q1 is 2 micro-ampere and the leakage current for transistor Q2 is two times of the leakage current of Q1. Given that the current gain for Q1 is 0.7 and the emitter current and gate current is 30 A & 0.25 A respectively. The anode current gain will be
Given shows the mutual characteristic for a junction gate field effect transistor. When the gate-source voltage is -2.5V, determine the value of drain current, the dynamic value of forward transconductance. -2.5V 2.5V - 12mA 5 mA -5.0-4.5 -4.0 -3.5 -3.0-2.5 -2.0 -1.5 -1.0 -0.5 Gate-source voltage, VGs (V) 0 20 18 16 14 12 10 00 6 4 2 0 Drain current, (mA)
RL 4. Suppose one NPN transistor is working under activation region, and Ip=0.005A. 12 What's the value of Ic given B=100. What's the value of I-? Vcc VE
How does the construction of a transistor differ from the construction of a PN junction diode? What are the two types of transistors? What are the three parts of a transistor called? Draw and label the schematic symbols for an NPN and a PNP transistor. What are transistors used for? How are transistors classified? What symbols are used to identify transistors? What purposes does the packaging of a transistor serve? How are transistor packages labeled? What are the basic functions of a transistor? What is the proper method for biasing a transistor? What is the difference between biasing an NPN and a PNP transistor? What is the barrier voltage for a germanium and a silicon transistor? What is the difference between the collector-base junction and the emitter- base junction bias voltages? What may cause a transistor to fail? What are two methods of testing a transistor? When using an ohmmeter, what should the results be for an NPN transistor? What are the two…
Pls help ASAP. Pls show all work.
1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA ms. b) Calculate the input power đissipated by the circuit if Rs is changed to 1.5 kQ. c) What maximum output power can be delivered by the circuit if RE is changed tol.5 kQ? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) Re = 16 2 1.2 kS2 B-40 100 pF Figure 1
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The mode of operation for the D-MOSFET is Select one: a. the ohmic region only b. the enhancement mode only c. both the depletion and enhancement modes d. the depletion mode only
Consider the BJT transistor circuit in Figure 1. If DC  = 150 and VBE = 0.65V, calculate:Base (IB), collector (IC), emitter (IE) currents, voltages VB, VC, VE, VCE and VCB. And what is PD(max) at 75OC? If the power dissipation derating factor for the transistor is 2mW/oC and the PD(max) is0.5 W at 25OC
Please answer in typing format
In a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.

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