e. VE. f. VB. g. VBC. For the emitter-bias network, determine: +20 V 430 ΚΩ Vi 10 μF OF 10 kQ2 10 μF Ht B = 50 1 kQ2 40 μF Vo

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A: The solution is given below

Q: -5V-WW RB 10V tim 1 kQ wMD 2 ΚΩ

A:

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.