Dopant density (cm³) 1021 1020 1019 1018 1017 1016 10¹5 1014 1013 10¹2 -3 10-4 10 10-² N type 10-1 10⁰ 10¹ 10² 10³ 104 Resistivity (ohm-cm) IGURE 2-8 Conversion between resistivity and dopant density of silicon at room =mperature. (After [3].) P type EXAMPLE 2-3 Temperature Dependence of Resistance a. What is the resistivity, p, of silicon doped with 10¹7cm-³ of arsenic? b. What is the resistance, R, of a piece of this silicon material 1 µm long and 0.1 μm² in cross-sectional area? c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K? d. What As concentration should one choose if she wishes to minimize the change in (c)?
Dopant density (cm³) 1021 1020 1019 1018 1017 1016 10¹5 1014 1013 10¹2 -3 10-4 10 10-² N type 10-1 10⁰ 10¹ 10² 10³ 104 Resistivity (ohm-cm) IGURE 2-8 Conversion between resistivity and dopant density of silicon at room =mperature. (After [3].) P type EXAMPLE 2-3 Temperature Dependence of Resistance a. What is the resistivity, p, of silicon doped with 10¹7cm-³ of arsenic? b. What is the resistance, R, of a piece of this silicon material 1 µm long and 0.1 μm² in cross-sectional area? c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K? d. What As concentration should one choose if she wishes to minimize the change in (c)?
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Quantization and Resolution
Quantization is a methodology of carrying out signal modulation by the process of mapping input values from an infinitely long set of continuous values to a smaller set of finite values. Quantization forms the basic algorithm for lossy compression algorithms and represents a given analog signal into digital signals. In other words, these algorithms form the base of an analog-to-digital converter. Devices that process the algorithm of quantization are known as a quantizer. These devices aid in rounding off (approximation) the errors of an input function called the quantized value.
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Question
![Dopant density (cm-³)
1021
1020
1019
1018
1017
1016
10¹5
1014
1013
10¹2,
10-4
10-3
10-¹ 10⁰ 10¹ 10² 10³ 104
Resistivity (ohm-cm)
FIGURE 2-8 Conversion between resistivity and dopant density of silicon at room
temperature. (After [3].)
N type
10-2
P type
EXAMPLE 2-3 Temperature Dependence of Resistance
a. What is the resistivity, p, of silicon doped with 10¹7cm-3 of arsenic?
b. What is the resistance, R, of a piece of this silicon material 1 um long and
0.1 μm² in cross-sectional area?
c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K?
d. What As concentration should one choose if she wishes to minimize the
change in (c)?](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fd53b5d21-36fa-4ee2-932f-fd40dc0982c5%2Fec4d9588-9b99-4ced-bb15-e59cfa81cbe3%2Fl9zkh1_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Dopant density (cm-³)
1021
1020
1019
1018
1017
1016
10¹5
1014
1013
10¹2,
10-4
10-3
10-¹ 10⁰ 10¹ 10² 10³ 104
Resistivity (ohm-cm)
FIGURE 2-8 Conversion between resistivity and dopant density of silicon at room
temperature. (After [3].)
N type
10-2
P type
EXAMPLE 2-3 Temperature Dependence of Resistance
a. What is the resistivity, p, of silicon doped with 10¹7cm-3 of arsenic?
b. What is the resistance, R, of a piece of this silicon material 1 um long and
0.1 μm² in cross-sectional area?
c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K?
d. What As concentration should one choose if she wishes to minimize the
change in (c)?
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