Dopant density (cm³) 1021 1020 1019 1018 1017 1016 10¹5 1014 1013 10¹2 -3 10-4 10 10-² N type 10-1 10⁰ 10¹ 10² 10³ 104 Resistivity (ohm-cm) IGURE 2-8 Conversion between resistivity and dopant density of silicon at room =mperature. (After [3].) P type EXAMPLE 2-3 Temperature Dependence of Resistance a. What is the resistivity, p, of silicon doped with 10¹7cm-³ of arsenic? b. What is the resistance, R, of a piece of this silicon material 1 µm long and 0.1 μm² in cross-sectional area? c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K? d. What As concentration should one choose if she wishes to minimize the change in (c)?

Dopant density (cm³) 1021 1020 1019 1018 1017 1016 10¹5 1014 1013 10¹2 -3 10-4 10 10-² N type 10-1 10⁰ 10¹ 10² 10³ 104 Resistivity (ohm-cm) IGURE 2-8 Conversion between resistivity and dopant density of silicon at room =mperature. (After [3].) P type EXAMPLE 2-3 Temperature Dependence of Resistance a. What is the resistivity, p, of silicon doped with 10¹7cm-³ of arsenic? b. What is the resistance, R, of a piece of this silicon material 1 µm long and 0.1 μm² in cross-sectional area? c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K? d. What As concentration should one choose if she wishes to minimize the change in (c)?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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