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Discuss qualitatively how you would expect binding energy in a GaAs/Alo.3 Gao.7 As quantum well to vary with the quantum well thickness, given that the binding energy of the excitons in bulk GaAs and Alo 3Gao.7 As are 4 meV and 6 meV respectively.

Discuss qualitatively how you would expect binding energy in a GaAs/Alo.3 Gao.7 As quantum well to vary with the quantum well thickness, given that the binding energy of the excitons in bulk GaAs and Alo 3Gao.7 As are 4 meV and 6 meV respectively.

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(6.10) Discuss qualitatively how you would expect the exciton binding energy in a GaAs/Alo.3Gao.7As quantum well to vary with the quantum well thickness, given that the binding energy of the excitons in bulk GaAs and Alo.3 Gao.7As are 4 meV and 6 meV respectively.
Transcribed Image Text:(6.10) Discuss qualitatively how you would expect the exciton binding energy in a GaAs/Alo.3Gao.7As quantum well to vary with the quantum well thickness, given that the binding energy of the excitons in bulk GaAs and Alo.3 Gao.7As are 4 meV and 6 meV respectively.
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