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Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I=26mA.given the mean life time of hole is 20uS at T-300K

Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I=26mA.given the mean life time of hole is 20uS at T-300K

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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  1. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I=26mA.given the mean life time of hole is 20uS at T-300K

 

8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a n-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C. AwM
Transcribed Image Text:8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a n-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C. AwM
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