d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc. Ic(mA) 110 µA 10 90 μΗ 80 μΑ 70 μΑ. 8 60 uA 7 50 μΑ 40 μ. 30 µA 3. 20 HA 10 µA 5 10 15 20 25 30 VCE (V)
d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc. Ic(mA) 110 µA 10 90 μΗ 80 μΑ 70 μΑ. 8 60 uA 7 50 μΑ 40 μ. 30 µA 3. 20 HA 10 µA 5 10 15 20 25 30 VCE (V)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
Related questions
Question
Please solve option d and e
![*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura-
tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V.
a. Rcif Vcc = 21V and Rg = 1.2 kN.
b. Bat the operating point.
c. Rg.
d. Power dissipated by the transistor.
e. Power dissipated by the resistor Rc-
Ic(mA)
110 µ
10
80 μΑ
70 μΑ
60 μΑ
7
50 µA
6.
40 μΑ
30 μ.
4
3
20 HA
2
10 µA
5
10
15
20
25
30
VCE (V)
FIG. 4.121](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F96eaaa97-d4bf-4689-8a3d-12f4114d9010%2F0133a981-a865-4077-8971-69abc3dc065a%2Ftb4stf_processed.jpeg&w=3840&q=75)
Transcribed Image Text:*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura-
tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V.
a. Rcif Vcc = 21V and Rg = 1.2 kN.
b. Bat the operating point.
c. Rg.
d. Power dissipated by the transistor.
e. Power dissipated by the resistor Rc-
Ic(mA)
110 µ
10
80 μΑ
70 μΑ
60 μΑ
7
50 µA
6.
40 μΑ
30 μ.
4
3
20 HA
2
10 µA
5
10
15
20
25
30
VCE (V)
FIG. 4.121
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