d. On an approximate basis, how are Ig and Ic related based on the results above? 14. a. Using the characteristics of Figs. 3.7 and 3.8, determine Iç if VCB = 5 V and VBE = 0.7 V. b. Determine VRE if Ic = 5 mA and VCB = 15 V. c. Repeat part (b) using the characteristics of Fig. 3.10b.
d. On an approximate basis, how are Ig and Ic related based on the results above? 14. a. Using the characteristics of Figs. 3.7 and 3.8, determine Iç if VCB = 5 V and VBE = 0.7 V. b. Determine VRE if Ic = 5 mA and VCB = 15 V. c. Repeat part (b) using the characteristics of Fig. 3.10b.
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Question
Common base configuration. Answer number 14 only
Reference: electronics device and circuit theory 11th edition by boylestad
!['E (mA)
Vca-20 V
8
Vca= 10 V
Vcs= 1 V
5
4
3
0.2
0,4
0.6
0.8
1.0
Var (V)
FIG. 3.7
Input or driving point characteristics for a
common-base silicon transistor amplifier.
The output set relates an output current (I) to an output voltage (VCR) for various levels
of input current (Ig) as shown in Fig. 3.8. The output or collector set of characteristics has
three basic regions of interest, as indicated in Fig. 3.8: the active, cutoff, and saturation
1e (mA)
Active region (unshaded area)
7 mA
6 mA
5 mA
4 mA
4.
3 mA
3.
2 mA
I = 1 mA
Ico-lcao
I=0 mA
Va (V)
40
BV CsO
10
20
30
Cutoff region
FIG. 3.8
Saturation region](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F90583220-99df-4959-bd53-963273f7c913%2F90ebc460-2490-4043-bc57-e150dbc43076%2Fhx8ezj_processed.jpeg&w=3840&q=75)
Transcribed Image Text:'E (mA)
Vca-20 V
8
Vca= 10 V
Vcs= 1 V
5
4
3
0.2
0,4
0.6
0.8
1.0
Var (V)
FIG. 3.7
Input or driving point characteristics for a
common-base silicon transistor amplifier.
The output set relates an output current (I) to an output voltage (VCR) for various levels
of input current (Ig) as shown in Fig. 3.8. The output or collector set of characteristics has
three basic regions of interest, as indicated in Fig. 3.8: the active, cutoff, and saturation
1e (mA)
Active region (unshaded area)
7 mA
6 mA
5 mA
4 mA
4.
3 mA
3.
2 mA
I = 1 mA
Ico-lcao
I=0 mA
Va (V)
40
BV CsO
10
20
30
Cutoff region
FIG. 3.8
Saturation region
![13. a. Using the characteristics of Fig. 3.8, determine the resulting collector current if Ig = 3.5 mA
and VCB = 10 V.
b. Repeat part (a) for Ig = 3.5 mA and VCB = 20 V.
c. How have the changes in Vcg affected the resulting level of I?
d. On an approximate basis, how are Ig and Iç related based on the results above?
14. a. Using the characteristics of Figs. 3.7 and 3.8, determine Iç if VcB = 5 V and VBE = 0.7 V.
b. Determine VBg if lc = 5 mA and VcB = 15 V.
c. Repeat part (b) using the characteristics of Fig. 3.10b.
d. Repeat part (b) using the characteristics of Fig. 3.10c.
e. Compare the solutions for VBg for parts (b) through (d). Can the difference be ignored if
voltage levels greater than a few volts are typically encountered?
15. a. Given an adc of 0.998, determine Iç if Ig = 4 mA.
b. Determine age if IĘ = 2.8 mA, Ic = 2.75 mA and Icgo = 0.1 µA.
16. From memory only, sketch the common-base BJT transistor configuration (for npn and pnp)
and indicate the polarity of the applied bias and resulting current directions.
3.5 Common-Emitter Configuration
17. Define IcBo and ICEO- How are they different? How are they related? Are they typically close
in magnitude?
18. Using the characteristics of Fig. 3.13:
a. Find the value of Iç corresponding to VBE = +750 mV and VCE = +4 V.
b. Find the value of VCE and VBg corresponding to Ic = 3.5 mA and Ig = 30 µA.
*19. a. For the common-emitter characteristics of Fig. 3.13, find the de beta at an operating point
of VCE = 6 V and Ic = 2 mA.
b. Find the value of a corresponding to this operating point.
c. At VCE = +6 V, find the corresponding value of ICEO-
d. Calculate the approximate value of ICBO using the de beta value obtained in part (a).
*20. a. Using the characteristics of Fig. 3.13a, determine ICEO at VcE = 10 V.
b. Determine Bac at Ig = 10 µA and VCE = 10 V.
c. Using the Bac determined in part (b), calculate IcBo-
21. a. Using the characteristics of Fig. 3.13a, determine Ba, at Ig = 60 µA and VCE = 4 V.
b. Repeat part (a) at Ig = 30 µA and VCE = 7 V.
c. Repeat part (a) at Ig = 10 µA and VCE = 10 V.
d. Reviewing the results of parts (a) through (c), does the value of Bg. change from point to point
on the characteristics? Where were the higher values found? Can you develop any general con-
clusions about the value of By. on a set of characteristics such as those provided in Fig. 3.13a?](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F90583220-99df-4959-bd53-963273f7c913%2F90ebc460-2490-4043-bc57-e150dbc43076%2Fy08kji7_processed.jpeg&w=3840&q=75)
Transcribed Image Text:13. a. Using the characteristics of Fig. 3.8, determine the resulting collector current if Ig = 3.5 mA
and VCB = 10 V.
b. Repeat part (a) for Ig = 3.5 mA and VCB = 20 V.
c. How have the changes in Vcg affected the resulting level of I?
d. On an approximate basis, how are Ig and Iç related based on the results above?
14. a. Using the characteristics of Figs. 3.7 and 3.8, determine Iç if VcB = 5 V and VBE = 0.7 V.
b. Determine VBg if lc = 5 mA and VcB = 15 V.
c. Repeat part (b) using the characteristics of Fig. 3.10b.
d. Repeat part (b) using the characteristics of Fig. 3.10c.
e. Compare the solutions for VBg for parts (b) through (d). Can the difference be ignored if
voltage levels greater than a few volts are typically encountered?
15. a. Given an adc of 0.998, determine Iç if Ig = 4 mA.
b. Determine age if IĘ = 2.8 mA, Ic = 2.75 mA and Icgo = 0.1 µA.
16. From memory only, sketch the common-base BJT transistor configuration (for npn and pnp)
and indicate the polarity of the applied bias and resulting current directions.
3.5 Common-Emitter Configuration
17. Define IcBo and ICEO- How are they different? How are they related? Are they typically close
in magnitude?
18. Using the characteristics of Fig. 3.13:
a. Find the value of Iç corresponding to VBE = +750 mV and VCE = +4 V.
b. Find the value of VCE and VBg corresponding to Ic = 3.5 mA and Ig = 30 µA.
*19. a. For the common-emitter characteristics of Fig. 3.13, find the de beta at an operating point
of VCE = 6 V and Ic = 2 mA.
b. Find the value of a corresponding to this operating point.
c. At VCE = +6 V, find the corresponding value of ICEO-
d. Calculate the approximate value of ICBO using the de beta value obtained in part (a).
*20. a. Using the characteristics of Fig. 3.13a, determine ICEO at VcE = 10 V.
b. Determine Bac at Ig = 10 µA and VCE = 10 V.
c. Using the Bac determined in part (b), calculate IcBo-
21. a. Using the characteristics of Fig. 3.13a, determine Ba, at Ig = 60 µA and VCE = 4 V.
b. Repeat part (a) at Ig = 30 µA and VCE = 7 V.
c. Repeat part (a) at Ig = 10 µA and VCE = 10 V.
d. Reviewing the results of parts (a) through (c), does the value of Bg. change from point to point
on the characteristics? Where were the higher values found? Can you develop any general con-
clusions about the value of By. on a set of characteristics such as those provided in Fig. 3.13a?
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