d) Repeat part b) for a reverse bias voltage of 0.65 V, Wdep пт e) Repeat part c) for a reverse bias voltage of 0.65 V. n(xp): x 10 "ст-1 -10 –1 p(®N) = %3D
Protection System
A system that protects electrical systems from faults by isolating the problematic part from the remainder of the system, preventing power from being cut from healthy elements, improving system dependability and efficiency is the protection system. Protection devices are the equipment that are utilized to implement the protection system.
Predictive Maintenance System
Predictive maintenance technologies are designed to assist in determining the state of in-service equipment so that maintenance can be scheduled. Predictive maintenance is the application of information; proactive maintenance approaches examine the condition of equipment and anticipate when it should maintain. The purpose of predictive maintenance is to forecast when equipment will fail (depending on a variety of parameters), then prevent the failure through routine and corrective maintenance.Condition monitoring is the continual monitoring of machines during process conditions to maintain optimal machine use, which is necessary for predictive maintenance. There are three types of condition monitoring: online, periodic, and remote. Finally, remote condition monitoring allows the equipment observed from a small place and data supplied for analysis.
Preventive Maintenance System
To maintain the equipment and materials on a regular basis in order to maintain those running conditions and reduce unnecessary shutdowns due to unexpected equipment failure is called Preventive Maintenance (PM).
only the sub-part d and e
![Pay attention to the units.
q = 1.6x10¬19C
€g = 1.062x101² C/Vcm
kT/q=0.026V
0.61x1016 cm-1 and Na
Consider a silicon PN junction at room temperature with N.
101° ст 1.
ст
= 0.64x
The junction is forward-biased with 0.65 V. Find
a) the built-in potential, Pbi,
Фы
b) the width of the depletion layer, Wdep,
W dep
пт
c) the minority carrier densities at the edges of the depletion layer,
n(xp) =|
x 1015 ст -1
p(xN) =
x 10'? ст
1
d) Repeat part b) for a reverse bias voltage of 0.65 V,
Wdep
nm
=
e) Repeat part c) for a reverse bias voltage of 0.65 V.
n(xp) =
x 10-7cm-1
ст
p(@x) =
x 10–10
ст
-1](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F1ab93fc1-b46c-405a-85d4-d8d6e274c5d6%2F4c616bbb-1fda-47f9-a0ca-e9605b5a4e1d%2Fam8xpal_processed.png&w=3840&q=75)
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