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d) A silicon wafer has a p-type feature on its surface, with an acceptor density of NA = 7.5 × 1021 per m³, a length of 200μm and cross-sectional dimensions of 15μm x 0.9μm. A voltage of 1.5V is applied across its length. (i) Calculate the conductivity of the p-type silicon, hence the drift current density and the total drift current along the length of the doped feature. (ii) Calculate the sheet resistance of the p-type silicon and the resistance of the doped feature. (iii) If the same p-type silicon is used in a pn diode with a built-in voltage of 0.70V, calculate the n-type doping density that is required.

d) A silicon wafer has a p-type feature on its surface, with an acceptor density of NA = 7.5 × 1021 per m³, a length of 200μm and cross-sectional dimensions of 15μm x 0.9μm. A voltage of 1.5V is applied across its length. (i) Calculate the conductivity of the p-type silicon, hence the drift current density and the total drift current along the length of the doped feature. (ii) Calculate the sheet resistance of the p-type silicon and the resistance of the doped feature. (iii) If the same p-type silicon is used in a pn diode with a built-in voltage of 0.70V, calculate the n-type doping density that is required.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q4 part d please

Q4. a) With the aid of suitable labelled diagrams, describe the processes of carrier generation and recombination in a semiconductor. b) Explain what is mean by the "mobility" of carriers in a conducting material, why electron mobilities are higher for electrons than holes, and why electron mobilities are higher in semiconductors like silicon than in a highly conducing metal like copper. c) Explain how the electrical conductivity of a material depends on the free carrier density and carrier mobility, and hence describe and explain the differences in the temperature dependences of the conductivity of an intrinsic semiconductor (e.g. pure silicon) compared with a good metal (e.g. copper). d) A silicon wafer has a p-type feature on its surface, with an acceptor density of NA = 7.5 × 10²1 per m³, a length of 200μm and cross-sectional dimensions of 15μm x 0.9μm. A voltage of 1.5V is applied across its length. (i) Calculate the conductivity of the p-type silicon, hence the drift current density and the total drift current along the length of the doped feature. (ii) Calculate the sheet resistance of the p-type silicon and the resistance of the doped feature. (iii) If the same p-type silicon is used in a pn diode with a built-in voltage of 0.70V, calculate the n-type doping density that is required.
Transcribed Image Text:Q4. a) With the aid of suitable labelled diagrams, describe the processes of carrier generation and recombination in a semiconductor. b) Explain what is mean by the "mobility" of carriers in a conducting material, why electron mobilities are higher for electrons than holes, and why electron mobilities are higher in semiconductors like silicon than in a highly conducing metal like copper. c) Explain how the electrical conductivity of a material depends on the free carrier density and carrier mobility, and hence describe and explain the differences in the temperature dependences of the conductivity of an intrinsic semiconductor (e.g. pure silicon) compared with a good metal (e.g. copper). d) A silicon wafer has a p-type feature on its surface, with an acceptor density of NA = 7.5 × 10²1 per m³, a length of 200μm and cross-sectional dimensions of 15μm x 0.9μm. A voltage of 1.5V is applied across its length. (i) Calculate the conductivity of the p-type silicon, hence the drift current density and the total drift current along the length of the doped feature. (ii) Calculate the sheet resistance of the p-type silicon and the resistance of the doped feature. (iii) If the same p-type silicon is used in a pn diode with a built-in voltage of 0.70V, calculate the n-type doping density that is required.
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