A sample of a particular intrinsic semiconductor has a electron density of n₂ = 5 x 10 cm-³ in the conduction band, at room temperature. What is the concentration of holes in the valence band under these conditions? e) The same underlying semiconductor is now doped with atoms that each donate two valence electrons. The dopant density is 3 x 10¹0 cm-3, and you may assume that all donor atoms are fully ionised. (i) What is the electron density in the doped material? (ii) What is the hole density in the doped material?
A sample of a particular intrinsic semiconductor has a electron density of n₂ = 5 x 10 cm-³ in the conduction band, at room temperature. What is the concentration of holes in the valence band under these conditions? e) The same underlying semiconductor is now doped with atoms that each donate two valence electrons. The dopant density is 3 x 10¹0 cm-3, and you may assume that all donor atoms are fully ionised. (i) What is the electron density in the doped material? (ii) What is the hole density in the doped material?
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Transcribed Image Text:A sample of a particular intrinsic semiconductor has a electron density of n₂ = 5 x 10 cm-³
in the conduction band, at room temperature.
What is the concentration of holes in the valence band under these conditions?
e)
The same underlying semiconductor is now doped with atoms that each donate two valence
electrons. The dopant density is 3 x 10¹0 cm-3, and you may assume that all donor atoms
are fully ionised.
(i) What is the electron density in the doped material?
(ii) What is the hole density in the doped material?
