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D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for the following specifications: g =1 mA/V and A,=-280 VV. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.I in Appendix K. Use the same channel length L for all devices and operate all four devices at Voy = 0.2 V. Determine the required channel length L, the bias current 1, and the WIL ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the WIL ratios. %3D VDp VGIO Voso Rp = (Kmras) ra Vazo Ren Rep (a) (b)

D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for the following specifications: g =1 mA/V and A,=-280 VV. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.I in Appendix K. Use the same channel length L for all devices and operate all four devices at Voy = 0.2 V. Determine the required channel length L, the bias current 1, and the WIL ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the WIL ratios. %3D VDp VGIO Voso Rp = (Kmras) ra Vazo Ren Rep (a) (b)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for che following specifications: g. = 1 mA/N and A, =-280 VV. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.I in Appendix K. Use the same channel length L for all devices and operate all four devices at Vovl= 0.2 V. Determine the required channel length L, the bias current 1, and the WIL ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the WIL ratios. Vpp Vaio- Voso Vazo- Rep (a) (b)
Transcribed Image Text:D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for che following specifications: g. = 1 mA/N and A, =-280 VV. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.I in Appendix K. Use the same channel length L for all devices and operate all four devices at Vovl= 0.2 V. Determine the required channel length L, the bias current 1, and the WIL ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the WIL ratios. Vpp Vaio- Voso Vazo- Rep (a) (b)
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