D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for the following specifications: g =1 mA/V and A,=-280 VV. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.I in Appendix K. Use the same channel length L for all devices and operate all four devices at Voy = 0.2 V. Determine the required channel length L, the bias current 1, and the WIL ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the WIL ratios. %3D VDp VGIO Voso Rp = (Kmras) ra Vazo Ren Rep (a) (b)

D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for the following specifications: g =1 mA/V and A,=-280 VV. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.I in Appendix K. Use the same channel length L for all devices and operate all four devices at Voy = 0.2 V. Determine the required channel length L, the bias current 1, and the WIL ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the WIL ratios. %3D VDp VGIO Voso Rp = (Kmras) ra Vazo Ren Rep (a) (b)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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