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constant = 1. If 1 × 1015 boron atoms per cm³ are uniformly added to silicon (diamond structure, lattice 0.543 nm) as a substitutional impurity, determine what percentage of the silicon atoms are displaced in the single crystal lattice, i.e., the concentration of boron as an impurity in silicon.

constant = 1. If 1 × 1015 boron atoms per cm³ are uniformly added to silicon (diamond structure, lattice 0.543 nm) as a substitutional impurity, determine what percentage of the silicon atoms are displaced in the single crystal lattice, i.e., the concentration of boron as an impurity in silicon.

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constant = 1. If 1 × 1015 boron atoms per cm³ are uniformly added to silicon (diamond structure, lattice 0.543 nm) as a substitutional impurity, determine what percentage of the silicon atoms are displaced in the single crystal lattice, i.e., the concentration of boron as an impurity in silicon.
Transcribed Image Text:constant = 1. If 1 × 1015 boron atoms per cm³ are uniformly added to silicon (diamond structure, lattice 0.543 nm) as a substitutional impurity, determine what percentage of the silicon atoms are displaced in the single crystal lattice, i.e., the concentration of boron as an impurity in silicon.
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