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Consider an NMOS structure that is made with the following characteristics tox = 100 4, N. = 8x10“ cm",Vro =0.7V,4, = 580cm /V - sec (a) Calculate the process transconductance (b) Calculate the body-bias coefficient (c) An NMOS is made with W=10um and L=1µm. Calculate the drain current if Vas=2v, Vos=1V,Vsa=1V (d) Repeat the calculation for current when Vas=2V, Vos=3V,Vss=OV

Consider an NMOS structure that is made with the following characteristics tox = 100 4, N. = 8x10“ cm",Vro =0.7V,4, = 580cm /V - sec (a) Calculate the process transconductance (b) Calculate the body-bias coefficient (c) An NMOS is made with W=10um and L=1µm. Calculate the drain current if Vas=2v, Vos=1V,Vsa=1V (d) Repeat the calculation for current when Vas=2V, Vos=3V,Vss=OV

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Consider an NMOS structure that is made with the following characteristics tox = 100 A, N, = 8x10" cm,V0 =0.7V,H, = 580cm² /V- sec (a) Calculate the process transconductance (b) Calculate the body-bias coefficient (c) An NMOS is made with W=10µm and L=1um. Calculate the drain current if Vas=2V, Vos=1V,VSB=1V (d) Repeat the calculation for current when Vas=2V, Vos=3V,VSB=0V
Transcribed Image Text:Consider an NMOS structure that is made with the following characteristics tox = 100 A, N, = 8x10" cm,V0 =0.7V,H, = 580cm² /V- sec (a) Calculate the process transconductance (b) Calculate the body-bias coefficient (c) An NMOS is made with W=10µm and L=1um. Calculate the drain current if Vas=2V, Vos=1V,VSB=1V (d) Repeat the calculation for current when Vas=2V, Vos=3V,VSB=0V
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